RVNB35NV04 - STMicroelectronics

RVNB35NV04
OMNIFET II fully autoprotected Power MOSFET
Datasheet - production data
*$3*36
 Aerospace and Defense features
– Dedicated traceability and part marking
– Production parts approval documents
available
– Adapted Extended life time and
obsolescence management
– Extended Product Change Notification
process
– Designed and manufactured to meet sub
ppm quality goals
– Advanced mold and frame designs for
Superior resilience to harsh environment
(acceleration, EMI, thermal, humidity)
– Single Fabrication, Assembly and Test site
– Dual internal production source capability
D2PAK
Features
Type
RDS(on)
Ilim
Vclamp
RVNB35NV04
10 m
30 A
40 V
Application
All types of resistive, inductive and capacitive
loads in Aerospace and Defense applications
 Linear current limitation
 Thermal shutdown
Description
 Short circuit protection
The RVNB35NV04 is a monolithic device
designed in STMicroelectronics® VIPower® M0-3
Technology, intended for replacement of standard
Power MOSFETs from DC up to 25 kHz
applications.
 Integrated clamp
 Low current drawn from input pin
 Diagnostic feedback through input pin
 ESD protection
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments. Fault feedback can be detected by
monitoring the voltage at the input pin.
 Direct access to the gate of the Power
MOSFET (analog driving)
 Compatible with standard Power MOSFET
Table 1. Device summary
Order codes
Package
D2PAK
September 2014
This is information on a product in full production.
Tube
Tape and reel
RVNB35NV04
RVNB35NV04TR
DocID026741 Rev 2
1/21
www.st.com
Contents
RVNB35NV04
Contents
1
Block diagram and pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
2/21
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.5
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package informantion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1
ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.2
D2PAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.3
D2PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DocID026741 Rev 2
RVNB35NV04
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Protections (-40°C < Tj < 150°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . 8
D2PAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Document revision history. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DocID026741 Rev 2
3/21
3
List of figures
RVNB35NV04
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
4/21
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal impedance for TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Source-drain diode forward characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Static drain-source on resistance vs. input voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Static drain-source on resistance vs. id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Transfer characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Normalized on resistance vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-on current slope, VIN = 5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn-on current slope, VIN = 3.5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Input voltage vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn off drain source voltage slope, VIN = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Turn off drain-source voltage slope, VIN = 3.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Switching time resistive load (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normalized input threshold voltage vs. temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Current limit vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Derating curve. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
D2PAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
D2PAK footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Tape and reel shipment (suffix “13TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID026741 Rev 2
RVNB35NV04
1
Block diagram and pin connection
Block diagram and pin connection
Figure 1. Block diagram
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DocID026741 Rev 2
*$3*36
5/21
20
Electrical specification
2
RVNB35NV04
Electrical specification
Figure 2. Current and voltage conventions
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2.1
Absolute maximum ratings
Stressing the device above the rating listed in Table 2 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to the conditions in table below for extended periods may affect device reliability
Table 2. Absolute maximum ratings
Symbol
Value
Unit
VDS
Drain-source voltage (VIN = 0 V)
Internally clamped
V
VIN
Input voltage
Internally clamped
V
IIN
Input current
±20
mA
Minimum input series impedance
4.7
Ω
Internally limited
A
-30
A
RIN MIN
ID
Drain current
IR
Reverse DC output current
VESD1
Electrostatic discharge (R = 1.5 kΩ, C = 100 pF)
4000
V
VESD2
Electrostatic discharge on output pin only (R = 330 Ω,
C = 150 pF)
16500
V
125
W
Ptot
Total dissipation at Tc = 25°C
Tj
Operating junction temperature
Internally limited
°C
Tc
Case operating temperature
Internally limited
°C
-55 to 150
°C
Tstg
6/21
Parameter
Storage temperature
DocID026741 Rev 2
RVNB35NV04
2.2
Electrical specification
Thermal data
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case (max)
Rthj-amb
Thermal resistance junction-ambient (max)
Value
Unit
1
°C/W
50(1)
°C/W
2
1. When mounted on a standard single-sided FR4 board with 50mm of Cu (at least 35 mm thick) connected
to all DRAIN pins.
2.3
Electrical characteristics
-40°C < Tj < 150°C, unless otherwise specified.
Table 4. Off
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
45
55
V
VCLAMP
Drain-source clamp
voltage
VIN = 0 V; ID = 15 A
40
VCLTH
Drain-source clamp
threshold voltage
VIN = 0 V; ID = 2 mA
36
VINTH
Input threshold voltage
VDS = VIN; ID = 1 mA
0.5
Supply current from input
pin
VDS = 0 V; VIN = 5 V
IISS
VINCL
Input-source clamp
voltage
IDSS
Zero input voltage drain
current (VIN = 0 V)
V
2.5
V
100
150
μA
6.8
8
V
-0.3
V
VDS = 13 V; VIN = 0 V;
Tj = 25 °C
30
μA
VDS = 25 V; VIN = 0 V
75
μA
IIN = 1 mA
6
IIN = -1 mA
-1.0
Table 5. On
Symbol
RDS(on)
Parameter
Test conditions
Static drain-source on
resistance
Max
Unit
VIN = 5 V; ID = 15 A; Tj = 25 °C
13
mΩ
VIN = 5 V; ID = 15 A; Tj = 150 °C
24
mΩ
Tj = 25°C, unless otherwise specified.
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
gfs(1)
Forward
transconductance
VDD = 13 V; ID = 15 A
—
35
—
S
COSS
Output capacitance
VDS = 13 V; f = 1 MHz; VIN = 0 V
—
1300
—
pF
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%
DocID026741 Rev 2
7/21
20
Electrical specification
RVNB35NV04
Table 7. Switching
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
(di/dt)on
Qi
Parameter
Test conditions
Turn-on delay time
VDD = 15 V; ID = 15 A;
Vgen = 5 V;
Rgen = RIN MIN = 4.7 Ω(see
Figure 2)
Rise time
Turn-off delay time
Fall time
Turn-on delay time
VDD = 15 V; ID = 15 A;
Vgen = 5 V; Rgen = 2.2 kΩ(see
Figure 2)
Rise time
Turn-off delay time
Fall time
Min
Typ
Max
Unit
—
150
500
ns
—
840
2500
ns
—
980
3000
ns
—
600
1500
ns
—
4
12
μs
—
27
100
μs
—
34
120
μs
—
31
110
μs
Turn-on current slope
VDD = 15 V; ID = 15 A;Vgen = 5 V;
Rgen = RIN MIN = 4.7 Ω
—
18
A/μs
Total input charge
VDD = 12 V; ID = 15 A; VIN = 5 V;
Igen = 2.13 mA (see Figure 7)
—
118
nC
Min
Typ
Max
Unit
—
0.8
—
V
—
400
—
ns
—
1.4
—
μC
—
7
—
A
Table 8. Source drain diode
Symbol
VSD(1)
Parameter
Test Conditions
Forward on voltage
ISD = 15 A; VIN = 0 V
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
ISD = 15 A; dI/dt = 100 A/μs;
VDD = 30 V; L = 200 μH (see
Figure 3)
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%
Table 9. Protections (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Test Conditions
Min
Typ
Max
Unit
30
45
60
A
Ilim
Drain current limit
VIN = 6 V; VDS = 13 V
tdlim
Step response current
limit
VIN = 6 V; VDS = 13 V
Tjsh
Overtemperature
shutdown
150
Tjrs
Overtemperature reset
135
Igf
Fault Sink Current
VIN = 5 V; VDS = 13 V; Tj = Tjsh
10
Single pulse
avalanche energy
Starting Tj = 25°C; VDD = 24 V;
VIN = 5 V;
Rgen = RIN MIN = 4.7 Ω
L = 24 mH (see Figure 5 and
Figure 6)
1.7
Eas
8/21
Parameter
DocID026741 Rev 2
50
175
μs
200
°C
°C
15
20
mA
J
RVNB35NV04
2.4
Electrical specification
Protection features
During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power MOSFET and can be used as a switch from
DC up to 25 KHz. The only difference from the user’s standpoint is that a small DC current
IISS (typ. 100μA) flows into the INPUT pin in order to supply the internal circuitry.
The device integrates:

Overvoltage clamp protection:
internally set at 45 V, along with the rugged avalanche characteristics of the Power
MOSFET stage give this device unrivalled ruggedness and energy handling capability.
This feature is mainly important when driving inductive loads.

Linear current limiter circuit:
limits the drain current ID to Ilim whatever the INPUT pin voltages is. When the current
limiter is active, the device operates in the linear region, so power dissipation may
exceed the capability of the heatsink. Both case and junction temperatures increase,
and if this phase lasts long enough, junction temperature may reach the
overtemperature threshold Tjsh.

Overtemperature and short circuit protection:
these are based on sensing the chip temperature and are not dependent on the input
voltage. The location of the sensing element on the chip in the power stage area
ensures fast, accurate detection of the junction temperature. Overtemperature cutout
occurs in the range 150°C to 190°C, a typical value being 170°C. The device is
automatically restarted when the chip temperature falls of about 15°C below shutdown
temperature.

Status feedback:
in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a
diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven
from a low impedance source, this current may be used in order to warn the control
circuit of a device shutdown. If the drive impedance is high enough so that the INPUT
pin driver is not able to supply the current Igf, the INPUT pin falls to 0 V. This does not
however affect the device operation: no requirement is put on the current capability of
the INPUT pin driver except to be able to supply the normal operation drive current IISS.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL Logic circuit.
DocID026741 Rev 2
9/21
20
Electrical specification
RVNB35NV04
Figure 3. Switching time test circuit for resistive load
9'
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Figure 4. Test circuit for diode recovery times
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10/21
DocID026741 Rev 2
RVNB35NV04
Electrical specification
Figure 5. Unclamped inductive load test circuits
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Figure 6. Unclamped inductive waveforms
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DocID026741 Rev 2
11/21
20
Electrical specification
RVNB35NV04
Figure 7. Input charge test circuit
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Figure 8. Thermal impedance for TO-220
*$3*36
12/21
DocID026741 Rev 2
RVNB35NV04
2.5
Electrical specification
Electrical characteristics curves
Figure 9. Source-drain diode forward
characteristics
9VGP9
Figure 10. Static drain source on
resistance
5GVRQP2KP
9LQ 9
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9LQ 9
7M ž&
7M ž&
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Figure 11. Static drain-source on
resistance vs. input voltage
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Figure 12. Static drain-source on
resistance vs. id
5GVRQP2KP
5GVRQP2KP
7M ž&
7M ž&
,G $
,G $
7M ž&
,G
,G
,G
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$
$
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$
7M ž&
9LQ 9
9LQ9
Figure 13. Transconductance
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Figure 14. Transfer characteristics
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7M ž&
9GV 9
7M ž&
7M ž&
9GV 9
7M ž&
7M ž&
7M ž&
,G$
*$3*36
DocID026741 Rev 2
9LQ9
*$3*36
13/21
20
Electrical specification
RVNB35NV04
Figure 15. Output characteristics
Figure 16. Normalized on resistance vs.
temperature
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Figure 18. Turn-on current slope,
VIN = 3.5 V
Figure 17. Turn-on current slope,
VIN = 5 V
GLGW$—V
GLGW$—V
9LQ 9
9GG 9
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9LQ 9
9GG 9
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Figure 19. Input voltage vs. input charge
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Figure 20. Turn off drain source voltage
slope, VIN = 5 V
9LQ9
G9GW9—V
9GV 9
,G $
9LQ 9
9GG 9
,G $
4JQ&
14/21
*$3*36
DocID026741 Rev 2
5J2KP
*$3*36
RVNB35NV04
Electrical specification
Figure 21. Turn off drain-source voltage
slope, VIN = 3.5 V
Figure 22. Switching time resistive load
(part 1)
G9GW9—V
7—V
WGRII
9LQ 9
9GG 9
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9GG 9
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5J RKP
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Figure 23. Switching time resistive load
(part 2)
5J2KP
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Figure 24. Normalized input threshold
voltage vs. temperature
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7QV
9GG 9
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5J RKP
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Figure 25. Current limit vs. junction
temperature
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Figure 26. Step response current limit
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9GV 9
9LQ 9
9GG9
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DocID026741 Rev 2
15/21
20
Electrical specification
RVNB35NV04
Figure 27. Derating curve
*$3*36
16/21
DocID026741 Rev 2
RVNB35NV04
Package informantion
3
Package informantion
3.1
ECOPACK®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
3.2
D2PAK mechanical data
Table 10. D2PAK mechanical data
mm.
Dim.
Min.
Typ
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
e
10.40
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
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Package informantion
RVNB35NV04
Figure 28. D2PAK package dimensions
("1($'5
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3.3
Package informantion
D2PAK packing information
Figure 29. D2PAK footprint
Figure 30. Tube shipment (no suffix)
$
&
%
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
50
500
532
6
21.3
0.6
All dimensions are in mm.
*$3*36
Figure 31. Tape and reel shipment (suffix “13TR”)
2%%, $)-%.3)/.3
"ASE 1TY
"ULK 1TY
! MAX
" MIN
# › &
' . MIN
4 MAX
!LL DIMENSIONS ARE IN MM
4!0% $)-%.3)/.3
!CCORDING TO %LECTRONIC )NDUSTRIES !SSOCIATION
%)! 3TANDARD REV ! &EB 4APE WIDTH
4APE (OLE 3PACING
#OMPONENT 3PACING
(OLE $IAMETER
(OLE $IAMETER
(OLE 0OSITION
#OMPARTMENT $EPTH
(OLE 3PACING
7
0 › 0
$ › $ MIN
& › + MAX
0 › !LL DIMENSIONS ARE IN MM
(QG
6WDUW
7RS
FRYHU
WDSH
1RFRPSRQHQWV
&RPSRQHQWV
1RFRPSRQHQWV
PPPLQ
(PSW\FRPSRQHQWVSRFNHWV
VDOHGZLWKFRYHUWDSH
PPPLQ
8VHUGLUHFWLRQRIIHHG
*$3*36
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Revision history
4
RVNB35NV04
Revision history
Table 11. Document revision history
20/21
Date
Revision
Changes
24-Jul-2014
1
Initial release.
16-Sep-2014
2
Updated Features on page 1.
DocID026741 Rev 2
RVNB35NV04
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