WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier (CLLCC) • EPI Processing — 120 ns Access Time • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP — Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts • JEDEC Standard Pin Configuration GENERAL DESCRIPTION The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size. The WS27C256L 256K EPROM provides 32K of 8 bit wide code store capacity for DSP, microprocessor, and microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the potential of no-wait state operation. And where this parameter is important, the WS27C256L provides the user with a very fast 35 nsec TOE output enable time. The WS27C256L is offered in a 28 pin 300 mil skinny CERDIP or the standard 600 mil CERDIP, and also in a 32 pad Ceramic Leadless Chip Carrier (CLLCC) for surface mount applications. All packages incorporate the standard JEDEC EPROM pinout. PIN CONFIGURATION TOP VIEW CERDIP A7 A12 VPP NC VCC A14 A13 Chip Carrier 4 3 2 32 31 30 1 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 O1 O2 GND A6 A5 A4 A3 A2 A1 A0 NC O0 VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND A8 A9 A11 NC OE A10 CE/PGM O7 O6 NC O3 O4 O5 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 OE A10 CE/PGM O7 O6 O5 O4 O3 PRODUCT SELECTION GUIDE PARAMETER Address Access Time (Max) Chip Select Time (Max) Output Enable Time (Max) Return to Main Menu WS27C256L-12 WS27C256L-15 WS27C256L-20 120 ns 120 ns 35 ns 150 ns 150 ns 40 ns 200 ns 200 ns 40 ns 4-19 WS27C256L ABSOLUTE MAXIMUM RATINGS* *NOTICE: Storage Temperature............................–65° to + 150°C Voltage on any Pin with Respect to Ground ....................................–0.6V to +7V VPP with Respect to Ground...................–0.6V to + 14V VCC Supply Voltage with Respect to Ground ....................................–0.6V to +7V ESD Protection ..................................................> 2000V Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability. OPERATING RANGE RANGE TEMPERATURE VCC Military –55°C to +125°C +5V ± 10% DC READ CHARACTERISTICS Over Operating Range. (See Above) SYMBOL PARAMETER TEST CONDITIONS MIN MAX UNITS VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 2.0 VCC + 1 V VOL Output Low Voltage IOL = 2.1 mA 0.4 V VOH Output High Voltage IOH = –400 µA ISB1 VCC Standby Current (CMOS) CE = VCC ± 0.3 V (Note 2) ISB2 VCC Standby Current CE = VIH ICC VCC Active Current CE = OE = VIL (Note 1) IPP VPP Supply Current VPP = VCC VPP VPP Read Voltage ILI Input Leakage Current ILO Output Leakage Current 3.5 V 100 µA 1 mA F = 5 MHz 40 mA F = 8 MHz 50 mA 100 µA VCC –0.4 VCC V VIN = 5.5 V or Gnd –10 10 µA VOUT = 5.5 V or Gnd –10 10 µA NOTES: 1. The supply current is the sum of ICC and IPP. The maximum current value is with Outputs O 0 to O 7 unloaded. 2. CMOS inputs: VIL = GND ± 0.3V, VIH = VCC ± 0.3 V. AC READ CHARACTERISTICS Over Operating Range (See Above) SYMBOL PARAMETER WS27C256L-12 MIN MAX WS27C256L-15 MIN MAX WS27C256L-20 MIN MAX t ACC Address to Output Delay 120 150 200 t CE CE to Output Delay 120 150 200 tOE OE to Output Delay 35 40 40 t DF Output Disable to Output Float (Note 3) 35 40 40 t OH Output Hold From Addresses, CE or OE, Whichever Occurred First (Note 3) NOTE: 4-20 UNITS ns 0 0 0 3. This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven – see timing diagram. WS27C256L AC READ TIMING DIAGRAM VIH ADDRESS VALID ADDRESSES VIL VIH CE VIL tCE (4) VIH OE (5) tDF VIL (4) tOE tACC VIH tOH HIGH Z OUTPUT HIGH Z VALID OUTPUT VIL NOTE: 4. OE may be delayed up to t CE – t OE after the falling edge of CE without impact on t CE. CAPACITANCE (5) TA = 25°C, f = 1 MHz PARAMETER CONDITIONS TYP (6) MAX UNITS Input Capacitance VIN = 0V 4 6 pF C OUT Output Capacitance VOUT = 0V 8 12 pF C VPP VPP Capacitance VPP = 0 V 18 25 pF SYMBOL C IN NOTES: 5. This parameter is only sampled and is not 100% tested. 6. Typical values are for TA = 25°C and nominal supply voltages. TEST LOAD (High Impedance Test Systems) A.C. TESTING INPUT/OUTPUT WAVEFORM 820 Ω 2.01 V D.U.T. 2.4 100 pF (INCLUDING SCOPE AND JIG CAPACITANCE) 0.4 2.0 0.8 2.0 TEST POINTS 0.8 A.C. testing inputs are driven at 2.4 V for a logic "1" and 0.4 V for a logic "0." Timing measurements are made at 2.0 V for a logic "1" and 0.8 V for a logic "0". NOTE: 7. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters. A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended. Inadequate decoupling may result in access time degradation or other transient performance failures. 4-21 WS27C256L PROGRAMMING INFORMATION DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.0 ± 0.25 V, VPP = 12.5 ± 0.5 V. See Notes 8, 9 and 10) SYMBOLS PARAMETER MIN MAX UNITS –10 10 µA ILI Input Leakage Current (VIN = VCC or Gnd) IPP VPP Supply Current During Programming Pulse (CE/PGM = VIL ) 60 mA ICC VCC Supply Current 40 mA VIL Input Low Voltage –0.1 0.8 V VIH Input High Voltage 2.0 VCC + 0.3 V VOL Output Low Voltage During Verify (IOL = 2.1 mA) 0.4 V VOH Output High Voltage During Verify (IOH = –400 µA) 3.5 V NOTES: 8. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP. 9. VPP must not be greater than 14 volts including overshoot. During CE/PGM = VIL, VPP must not be switched from 5 volts to 12.5 volts or vice-versa. 10. During power up the CE/PGM pin must be brought high (≥ VIH) either coincident with or before power is applied to VPP. AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.0 ± 0.25 V, VPP = 12.5 ± 0.5 V) SYMBOLS PARAMETER MIN TYP MAX tAS Address Setup Time 2 µs tCOH CE High to OE High 2 µs tOES Output Enable Setup Time 2 µs tOS Data Setup Time 2 µs tAH Address Hold Time 0 µs tOH Data Hold Time 2 µs tDF Chip Disable to Output Float Delay 0 tOE Data Valid From Output Enable t VS VPP Setup Time tPW PGM Pulse Width tOCX OE Low to CE "Don't Care" 2 ADDRESS STABLE tAH CE/PGM HIGH Z DATA IN STABLE tOS VIH tOH DATA OUT VALID tOE tDF tVS tOCX tCES VIL tPW VIH OE VIL ns tOES µs µs VPP VCC 55 1000 tAS VPP ns µs 500 ADDRESSES DATA 55 2 PROGRAMMING WAVEFORM 4-22 UNITS tCOH WS27C256L MODE SELECTION The modes of operation of the WS27C256L are listed below. A single 5 V power supply is required in the read mode. All inputs are TTL levels except for VPP and A9 for device signature. PINS CE/PGM OE A9 A0 VPP VCC OUTPUTS Read VIL VIL X X VCC 5.0 V DOUT Output Disable X VIH X X VCC 5.0 V High Z VIH X X X VCC 5.0 V High Z 5.8 V DIN 5.8 V DOUT 5.0 V High Z MODE Standby Programming VIL VIH X X Program Verify X VIL X X Program Inhibit VIH VIH X X VPP(12) VPP(12) VPP(12) VH(12) VH(12) VIL VCC 5.0 V 23 H VIH VCC 5.0 V C0 H Signature Manufacturer (13) VIL VIL Device(13) VIL VIL NOTES: 11. X can be VIL or VIH. 12. VH = VPP = 12.5 ± 0.5 V. 13. A1 – A8, A10 – A14 = VIL. ORDERING INFORMATION PART NUMBER SPEED (ns) PACKAGE TYPE WSI PACKAGE OPERATING TEMPERATURE MANUFACTURING DRAWING RANGE PROCEDURE WS27C256L-12CMB* 120 32 Pad CLLCC C2 Military MIL-STD-883C WS27C256L-12DMB* 120 28 Pin CERDIP, 0.6" D2 Military MIL-STD-883C WS27C256L-12TMB* 120 28 Pin CERDIP, 0.3" T2 Military MIL-STD-883C WS27C256L-15DMB* 150 28 Pin CERDIP, 0.6" D2 Military MIL-STD-883C WS27C256L-15TMB* 150 28 Pin CERDIP, 0.3" T2 Military MIL-STD-883C WS27C256L-20DMB* 200 28 Pin CERDIP, 0.6" D2 Military MIL-STD-883C NOTE: The actual part marking will not include the initials "WS." *SMD product. See page 4-1 for SMD number. PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS REFER TO PAGE 5-1 The WS27C256L is programmed using Algorithm C shown on page 5-7. Return to Main Menu 4-23