U2791B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from 100 – 1000 MHz, low current consumption, selectable gain, power down mode and is adjustment free. The IC is suitable for direct conversion and image rejection applications in digital radio systems up to 1 GHz such as cellular radio, cordless telephone, cable TV and satellite TV systems. Features D Supply voltage 5 V (typ.) D Very low power consumption 125 mW (typ.) D Very good image rejection by means of phase control loop for precise 90° phase shifting D Duty cycle regeneration for single ended LO input D D D D Low LO input level –10 dBm (typ.) LO – frequency from 100 MHz to 1 GHz Power down mode 25 dB gain control signal Block Diagram VS PD IIX 5,6 14 4 II 3 1 IX Power down OUTPUT 2 I 7 90°Control loop RFin 0° 90° Frequency doubler 8 Duty cycle regenerator 17 LO 13 PC 12 PCX Q 19 OUTPUT 20 QX 11 15,16,18 GC Rev. A2: 08.06.1995 10 GND QQX 9 QQ 95 9755 1 (11) U2791B TELEFUNKEN Semiconductors Pin Description IX 1 20 QX I 2 19 Q II 3 18 GND IIX 4 17 LOin VS 5 16 GND VS 6 15 GND RFin 7 14 PD RFXin 8 13 QQ 9 12 PCX QQX 10 11 GC PC Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol IX I II IIX VS VS RFin RFXin QQ QQX GC PCX PC PD GND GND LOin GND Q QX Function IX output I output II low pass filter I IIX low pass filter I Supply voltage Supply voltage RF input RFX input QQ low pass filter Q QQX low pass filter Q GC gain control PCX phase control PC phase control PD power down Ground Ground LO input Ground Q output QX output 94 9441 Electrostatic sensitive device observe precautions for handling. Absolute Maximum Ratings Parameters Supply voltage Pins 5 and 6 Input voltage Pins 7, 8 and 17 Junction temperature Storage temperature range Symbol VS Vi Tj Tstg Value 6 0 to VS 125 –40 to 125 Unit V V °C °C Symbol VS Tamb Value 4.75 to 5.25 –40 to 85 Unit V °C Symbol RthJA Value 140 Unit K/W Operating Range Parameters Supply voltage range Pins 5 and 6 Ambient temperature range Thermal Resistance Junction ambient 2 (11) Parameters SSO 20 Rev. A2: 08.06.1995 U2791B TELEFUNKEN Semiconductors Electrical Characteristics Test conditions (unless otherwise specified); VS = 5 V, Tamb = 25°C, referred to test circuit System impedance ZO = 50 W, fiLO = 950 MHz, PiLO = –10 dBm Parameters Supply voltage range Supply current Power down mode, PD “OFF”mode supply current Switch voltage “Power ON” “Power DOWN” LO input, LOin Frequency range Input level Input impedance Voltage standing wave ratio Duty cycle range RF input, RFin Noise figure (DSB) symmetrical output Frequency range –1 dB input compression point Second order IIP Third order IIP Test Conditions / Pins Pins 5 and 6 Pins 5 and 6 VPD ≤ 0.5 V Pins 5, 6 VPD = 1.0 V Pin 14 Note 1 Pin 14 Input impedance Min. 4.75 Typ. Max. 5.25 30 mA ≤1 20 IsPD VPON VPOFF 4 fiLO PiLO ZiLO VSWRLO 100 –12 Unit V mA 1 V V 1000 –5 MHz dBm Pin 17 Note 2 See figure 6 See figure 2 –10 50 1.2 LODCR @ 950 MHz Note 3 @ 100 MHz Pins 7 and 8 NF Pins 7 and 8 Pins 7 and 8 fiRF High gain Low gain Note 4 Pins 7 and 8 Pins 7 and 8 High gain Low gain LO leakage Symbol VS IS Pins 7 and 8 Symmetric input Asymmetric input Pins 7 and 8 see figure 6 0.4 W 2 0.6 12 10 dB >fiLO ICPHG ICPLG IIP2HG –8 +3.5 35 dBm IIP3HG IIP3LG LOL +3 +13 dBm ≤ –60 ≤ –55 500Wø 0.8pF dBm ZiRF dBm Note 1: During power down status a load circuitry with dc-isolation to GND is assumed otherwise a current of I (VS –0.8 V) /RI has to be added to the above power down current for each output I, IX, Q, QX. Note 2: The required LO-Level is a function of the LO-frequency (see figure 3). Note 3: Measured with input matching. For 950 MHz the optional transmission line T3 at the RF input may be used for this purpose. Noise figure measurements without using the differential output signal result in a worse noise figure. Note 4: Using Pins 7 and 8 as a symmetric RF input, the second order IIP can be improved. Rev. A2: 08.06.1995 3 (11) U2791B TELEFUNKEN Semiconductors Electrical Characteristics Test conditions (unless otherwise specified); VS = 5 V, Tamb = 25°C, referred to test circuit System impedance ZO = 50 , fiLO = 950 MHz, PiLO = –10 dBm Parameters I/O outputs Test Conditions / Pins Emitter follower I = 0.6 mA Note 5 Pins 1, 2, 19 and 20 3-dB bandwidth w/o external C I/Q amplitude Pins 1, 2, 19 and 20 imbalance I/Q quadrature error Pins 1, 2, 19 and 20 I/Q maximum output Pins 1, 2, 19 and 20 swing Symm. output RL > 5 k DC output voltage Pins 1, 2, 19 and 20 DC output offset voltage Note 6 Pins 1, 2, 19 and 20 Output impedance Gain control, GC Control range power gain, gain high/gain low Switch voltage “Gain high” “Gain low” Settling time, ST Power “OFF ” – “ON ” Power “ON ” – “OFF ” Pins 1, 2, 19 and 20 see figure 6 Symbol I, IX / Q, QX Min. BWI/Q ≥ 30 Typ. Max. Unit MHz AII/Q QEI/Q Max I/Q ≤ ±0.2 ≤ ±1.5 VOUT VOFSI/Q I/IX Q/QX Zout 2.8 ≤ 30 V mV 50 25 23/–2 dB Note 7 Pin 11 GCR PGH/GGL Note 8 Pin 11 Pin 11 GCVHigh GCVLow STON STOFF 2 1 <4 <4 dB Deg VPP V V s s Note 5: Due to test board parasitics this bandwidth is reduced and not equal for I, IX, Q, QX. If symmetry and full bandwidth is required the low-pass Pins 3, 4, 9 and 10 should be isolated from the board. The bandwidth of the I/Q outputs can be increased further by using a resistor between the Pins 3, 4, 9 and 10. This resistors shunt the internal loads of RI 5.4 k The decrease in gain here has to be considered. Note 6: Output emitter follower internal acurrent I = 0.6 mA allows only small voltage swing with a 50 load. For low signal distortion the load impedance should be RI ≥ 5 k. Note 7: Referred to the level of the output vector I 2 Q 2 Note 8: The low gain status is achieved with an open or high ohmic Pin 11. A recommended application circuit for switching between high and low gain status is shown in figure 1. Ǹ ) 4 (11) Rev. A2: 08.06.1995 U2791B TELEFUNKEN Semiconductors Test Circuit 95 9841 * optional for single ended tests (notice 3 dB bandwidth of AD620) T1, T2 = transmission line ZO = 50 W. If no GC function is required, connect Pin 11 to GND. For high and low gain status GC’ is to be switched to GND respectively to VS. Figure 1. Rev. A2: 08.06.1995 5 (11) U2791B TELEFUNKEN Semiconductors 18 9 16 NF ( dB ) 11 VSWR 7 5 12 3 10 1 100 o 8 300 500 700 900 1100 LO frequency ( MHz) 95 9800 0 200 400 600 800 1000 LO frequency ( MHz ) 95 9856 Figure 2. Typical VSWR frequency response of the LO input Figure 4. Noise figure vs. LO frequency; o: value at 950 MHz with RF input matching with T3 10 30 0 26 –10 Gain ( dB ) PLO ( dBm ) 14 –20 x 22 18 –30 14 –40 –50 10 0 95 9855 200 400 600 800 1000 LO frequency ( MHz ) Figure 3. Typical suitable LO power range vs. frequency 6 (11) 0 95 10069 200 400 600 800 1000 LO frequency ( MHz ) Figure 5. Gain vs. LO frequency, x: value at 950 MHz with RF input matching with T3 Rev. A2: 08.06.1995 U2791B TELEFUNKEN Semiconductors j 0.5j 2j 0.2j 5j ÁÁ 0 0.2 ÁÁ Á 0.5 1 a c Á 2 Á 1 5 b –0.2j –5j –0.5j –2j 95 9976 –j Figure 6. Typical S11 frequency response of the a: LO input, LO frequency from 100 MHz to 1100 MHz, marker: 950 MHz b: RF input, RF frequency from 100 MHz to 1100 MHz, marker: 950 MHz c: I/Q outputs, baseband frequency from 5 MHz to 55 MHz, marker: 25 MHz Rev. A2: 08.06.1995 7 (11) U2791B TELEFUNKEN Semiconductors Board Layout 94 9698 8 (11) Rev. A2: 08.06.1995 U2791B TELEFUNKEN Semiconductors Board Layout 95 9852 External Components CNPC GSW CUCC CRFX CLO CNLO CRF CII, CQQ T3 Calibration Part CI, CIX, CQ, CQX CPDN CGC CPC 100 nF 1 nF 100 pF 0W 100 pF optional external lowpass filters transmission line for RF-input matching to connect optionally optional for ac-coupling at baseband outputs 100 pF 100 pF 100 pF Rev. A2: 08.06.1995 100 pF gain switch CO, CS, CL 100 pF RL 50 W Conversion to Single Ended Output OP1, OP2 RG1, RG2 RD1, RD2 CS1, CS2 CS3, CS4, AD620 prog. gain, see datasheet, for 5.6 kW a gain of 1 to 50 W is achieved together with RD1 and RD2 450 W 100 nF 100 nF 9 (11) U2791B TELEFUNKEN Semiconductors Description of Evaluation Board Board material: epoxy; år = 4.8, thickness = 0.5 mm transmission lines: ZO = 50 W The board offers the following functions D The test circuit for the U2791B: – The supply voltage and the control inputs GC, PC and PD are connected via a plug strip. The control input voltages can be generated via external potentio-meters; then the inputs should be ac-grounded (time requirements in burst-mode for power up have to be considered). – The outputs I, IX, Q, QX are dc coupled via an plug strip or can be ac-connected via SMB plugs for high frequency tests e.g. noise figure or s-parameter measurement. The pins II, IIX, QQ, QQX allow user definable filtering with 2 external capacitors CII, CQQ. – Also the offsets of both channels can be adjusted with two potis or resistors. – The LO- and the RF-inputs are ac-coupled and connected via SMB plugs. If transmission line T3 is connected to the RF-input and ac-grounded at the other end, gain and noise performance can be improved (input matching to 50 W). – The complementary RF-input is ac-coupled to GND (CRFX = 1 nF). D A calibration part, which allows to calibrate an s-parameter analyzer directly to the in- and outputsignal ports of the U2791B. D For single ended measurements at the demodulator outputs, two OP’s (e.g., AD620 or other) can be configured with programmable gain; together with an output-divider network RD = 450 W to RL = 50 W, direct measurements with 50 W load-impedances are possible at frequencies 100 kHz. t Ordering Information Extended Type Number U2791B-FS Package SS0 20 Remarks Dimensions in mm Package: SSO 20 94 8872 10 (11) Rev. A2: 08.06.1995 TELEFUNKEN Semiconductors U2791B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A2: 08.06.1995 11 (11)