TEMIC U2791B

U2791B
TELEFUNKEN Semiconductors
1000 MHz Quadrature Demodulator
Description
U2791B silicon monolithic integrated circuit is a
quadrature demodulator that is manufactured using
TELEFUNKEN’s advanced UHF technology. This
demodulator features a frequency range from
100 – 1000 MHz, low current consumption, selectable
gain, power down mode and is adjustment free. The IC is
suitable for direct conversion and image rejection
applications in digital radio systems up to 1 GHz such as
cellular radio, cordless telephone, cable TV and satellite
TV systems.
Features
D Supply voltage 5 V (typ.)
D Very low power consumption 125 mW (typ.)
D Very good image rejection by means of phase control
loop for precise 90° phase shifting
D Duty cycle regeneration for single ended LO input
D
D
D
D
Low LO input level –10 dBm (typ.)
LO – frequency from 100 MHz to 1 GHz
Power down mode
25 dB gain control
signal
Block Diagram
VS
PD
IIX
5,6
14
4
II
3
1 IX
Power
down
OUTPUT
2 I
7
90°Control
loop
RFin
0°
90°
Frequency
doubler
8
Duty cycle
regenerator
17 LO
13 PC
12 PCX
Q
19
OUTPUT
20 QX
11
15,16,18
GC
Rev. A2: 08.06.1995
10
GND
QQX
9
QQ
95 9755
1 (11)
U2791B
TELEFUNKEN Semiconductors
Pin Description
IX
1
20 QX
I
2
19 Q
II
3
18
GND
IIX
4
17
LOin
VS
5
16 GND
VS
6
15 GND
RFin
7
14 PD
RFXin
8
13
QQ
9
12 PCX
QQX
10
11 GC
PC
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Symbol
IX
I
II
IIX
VS
VS
RFin
RFXin
QQ
QQX
GC
PCX
PC
PD
GND
GND
LOin
GND
Q
QX
Function
IX output
I output
II low pass filter I
IIX low pass filter I
Supply voltage
Supply voltage
RF input
RFX input
QQ low pass filter Q
QQX low pass filter Q
GC gain control
PCX phase control
PC phase control
PD power down
Ground
Ground
LO input
Ground
Q output
QX output
94 9441
Electrostatic sensitive device observe precautions for handling.
Absolute Maximum Ratings
Parameters
Supply voltage
Pins 5 and 6
Input voltage
Pins 7, 8 and 17
Junction temperature
Storage temperature range
Symbol
VS
Vi
Tj
Tstg
Value
6
0 to VS
125
–40 to 125
Unit
V
V
°C
°C
Symbol
VS
Tamb
Value
4.75 to 5.25
–40 to 85
Unit
V
°C
Symbol
RthJA
Value
140
Unit
K/W
Operating Range
Parameters
Supply voltage range
Pins 5 and 6
Ambient temperature range
Thermal Resistance
Junction ambient
2 (11)
Parameters
SSO 20
Rev. A2: 08.06.1995
U2791B
TELEFUNKEN Semiconductors
Electrical Characteristics
Test conditions (unless otherwise specified); VS = 5 V, Tamb = 25°C, referred to test circuit
System impedance ZO = 50 W, fiLO = 950 MHz, PiLO = –10 dBm
Parameters
Supply voltage range
Supply current
Power down mode, PD
“OFF”mode supply
current
Switch voltage
“Power ON”
“Power DOWN”
LO input, LOin
Frequency range
Input level
Input impedance
Voltage standing wave
ratio
Duty cycle range
RF input, RFin
Noise figure (DSB)
symmetrical output
Frequency range
–1 dB input
compression point
Second order IIP
Third order IIP
Test Conditions / Pins
Pins 5 and 6
Pins 5 and 6
VPD ≤ 0.5 V Pins 5, 6 VPD
= 1.0 V
Pin 14
Note 1
Pin 14
Input impedance
Min.
4.75
Typ.
Max.
5.25
30
mA
≤1
20
IsPD
VPON
VPOFF
4
fiLO
PiLO
ZiLO
VSWRLO
100
–12
Unit
V
mA
1
V
V
1000
–5
MHz
dBm
Pin 17
Note 2
See figure 6
See figure 2
–10
50
1.2
LODCR
@ 950 MHz Note 3
@ 100 MHz Pins 7 and 8
NF
Pins 7 and 8
Pins 7 and 8
fiRF
High gain
Low gain
Note 4
Pins 7 and 8
Pins 7 and 8
High gain
Low gain
LO leakage
Symbol
VS
IS
Pins 7 and 8
Symmetric input
Asymmetric input
Pins 7 and 8
see figure 6
0.4
W
2
0.6
12
10
dB
>fiLO
ICPHG
ICPLG
IIP2HG
–8
+3.5
35
dBm
IIP3HG
IIP3LG
LOL
+3
+13
dBm
≤ –60
≤ –55
500Wø
0.8pF
dBm
ZiRF
dBm
Note 1: During power down status a load circuitry with dc-isolation to GND is assumed otherwise a current of
I (VS –0.8 V) /RI has to be added to the above power down current for each output I, IX, Q, QX.
Note 2: The required LO-Level is a function of the LO-frequency (see figure 3).
Note 3: Measured with input matching. For 950 MHz the optional transmission line T3 at the RF input may be used
for this purpose. Noise figure measurements without using the differential output signal result in a worse noise
figure.
Note 4: Using Pins 7 and 8 as a symmetric RF input, the second order IIP can be improved.
Rev. A2: 08.06.1995
3 (11)
U2791B
TELEFUNKEN Semiconductors
Electrical Characteristics
Test conditions (unless otherwise specified); VS = 5 V, Tamb = 25°C, referred to test circuit
System impedance ZO = 50 , fiLO = 950 MHz, PiLO = –10 dBm
Parameters
I/O outputs
Test Conditions / Pins
Emitter follower
I = 0.6 mA
Note 5
Pins 1, 2, 19 and 20
3-dB bandwidth
w/o external C
I/Q amplitude
Pins 1, 2, 19 and 20
imbalance
I/Q quadrature error
Pins 1, 2, 19 and 20
I/Q maximum output
Pins 1, 2, 19 and 20
swing
Symm. output RL > 5 k
DC output voltage
Pins 1, 2, 19 and 20
DC output offset voltage Note 6 Pins 1, 2, 19 and 20
Output impedance
Gain control, GC
Control range power
gain, gain high/gain low
Switch voltage
“Gain high”
“Gain low”
Settling time, ST
Power “OFF ” – “ON ”
Power “ON ” – “OFF ”
Pins 1, 2, 19 and 20
see figure 6
Symbol
I, IX / Q,
QX
Min.
BWI/Q
≥ 30
Typ.
Max.
Unit
MHz
AII/Q
QEI/Q
Max I/Q
≤ ±0.2
≤ ±1.5
VOUT
VOFSI/Q
I/IX
Q/QX
Zout
2.8
≤ 30
V
mV
50
25
23/–2
dB
Note 7
Pin 11
GCR
PGH/GGL
Note 8
Pin 11
Pin 11
GCVHigh
GCVLow
STON
STOFF
2
1
<4
<4
dB
Deg
VPP
V
V
s
s
Note 5: Due to test board parasitics this bandwidth is reduced and not equal for I, IX, Q, QX.
If symmetry and full bandwidth is required the low-pass Pins 3, 4, 9 and 10 should be isolated from the board.
The bandwidth of the I/Q outputs can be increased further by using a resistor between the Pins 3, 4, 9 and 10.
This resistors shunt the internal loads of RI 5.4 k The decrease in gain here has to be considered.
Note 6: Output emitter follower internal acurrent I = 0.6 mA allows only small voltage swing with a 50 load.
For low signal distortion the load impedance should be RI ≥ 5 k.
Note 7: Referred to the level of the output vector I 2
Q 2
Note 8: The low gain status is achieved with an open or high ohmic Pin 11. A recommended application circuit for
switching between high and low gain status is shown in figure 1.
Ǹ )
4 (11)
Rev. A2: 08.06.1995
U2791B
TELEFUNKEN Semiconductors
Test Circuit
95 9841
*
optional for single ended tests (notice 3 dB bandwidth of AD620)
T1, T2 = transmission line ZO = 50 W.
If no GC function is required, connect Pin 11 to GND.
For high and low gain status GC’ is to be switched to GND respectively to VS.
Figure 1.
Rev. A2: 08.06.1995
5 (11)
U2791B
TELEFUNKEN Semiconductors
18
9
16
NF ( dB )
11
VSWR
7
5
12
3
10
1
100
o
8
300
500
700
900
1100
LO frequency ( MHz)
95 9800
0
200
400
600
800
1000
LO frequency ( MHz )
95 9856
Figure 2. Typical VSWR frequency response
of the LO input
Figure 4. Noise figure vs. LO frequency;
o: value at 950 MHz with RF input matching with T3
10
30
0
26
–10
Gain ( dB )
PLO ( dBm )
14
–20
x
22
18
–30
14
–40
–50
10
0
95 9855
200
400
600
800
1000
LO frequency ( MHz )
Figure 3. Typical suitable LO power range vs. frequency
6 (11)
0
95 10069
200
400
600
800
1000
LO frequency ( MHz )
Figure 5. Gain vs. LO frequency,
x: value at 950 MHz with RF input matching with T3
Rev. A2: 08.06.1995
U2791B
TELEFUNKEN Semiconductors
j
0.5j
2j
0.2j
5j
ÁÁ
0
0.2
ÁÁ Á
0.5
1
a
c
Á
2
Á
1
5
b
–0.2j
–5j
–0.5j
–2j
95 9976
–j
Figure 6. Typical S11 frequency response of the
a: LO input, LO frequency from 100 MHz to 1100 MHz, marker: 950 MHz
b: RF input, RF frequency from 100 MHz to 1100 MHz, marker: 950 MHz
c: I/Q outputs, baseband frequency from 5 MHz to 55 MHz, marker: 25 MHz
Rev. A2: 08.06.1995
7 (11)
U2791B
TELEFUNKEN Semiconductors
Board Layout
94 9698
8 (11)
Rev. A2: 08.06.1995
U2791B
TELEFUNKEN Semiconductors
Board Layout
95 9852
External Components
CNPC
GSW
CUCC
CRFX
CLO
CNLO
CRF
CII, CQQ
T3
Calibration Part
CI, CIX,
CQ, CQX
CPDN
CGC
CPC
100 nF
1 nF
100 pF
0W
100 pF
optional external lowpass filters
transmission line for RF-input
matching to connect optionally
optional for ac-coupling at
baseband outputs
100 pF
100 pF
100 pF
Rev. A2: 08.06.1995
100 pF
gain switch
CO, CS, CL 100 pF
RL
50 W
Conversion to Single Ended Output
OP1, OP2
RG1, RG2
RD1, RD2
CS1, CS2
CS3, CS4,
AD620
prog. gain, see datasheet, for 5.6 kW a
gain of 1 to 50 W is achieved together
with RD1 and RD2
450 W
100 nF
100 nF
9 (11)
U2791B
TELEFUNKEN Semiconductors
Description of Evaluation Board
Board material:
epoxy; år = 4.8, thickness = 0.5 mm
transmission lines: ZO = 50 W
The board offers the following functions
D The test circuit for the U2791B:
– The supply voltage and the control inputs GC, PC and
PD are connected via a plug strip. The control input
voltages
can
be
generated
via
external
potentio-meters; then the inputs should be
ac-grounded (time requirements in burst-mode for
power up have to be considered).
– The outputs I, IX, Q, QX are dc coupled via an plug
strip or can be ac-connected via SMB plugs for high
frequency tests e.g. noise figure or s-parameter
measurement. The pins II, IIX, QQ, QQX allow user
definable filtering with 2 external capacitors CII,
CQQ.
– Also the offsets of both channels can be adjusted with
two potis or resistors.
– The LO- and the RF-inputs are ac-coupled and
connected via SMB plugs. If transmission line T3 is
connected to the RF-input and ac-grounded at the
other end, gain and noise performance can be
improved (input matching to 50 W).
– The complementary RF-input is ac-coupled to GND
(CRFX = 1 nF).
D A calibration part, which allows to calibrate an
s-parameter analyzer directly to the in- and outputsignal ports of the U2791B.
D For single ended measurements at the demodulator
outputs, two OP’s (e.g., AD620 or other) can be
configured with programmable gain; together with an
output-divider network RD = 450 W to RL = 50 W,
direct measurements with 50 W load-impedances are
possible at frequencies 100 kHz.
t
Ordering Information
Extended Type Number
U2791B-FS
Package
SS0 20
Remarks
Dimensions in mm
Package: SSO 20
94 8872
10 (11)
Rev. A2: 08.06.1995
TELEFUNKEN Semiconductors
U2791B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Rev. A2: 08.06.1995
11 (11)