U2891B TELEFUNKEN Semiconductors Gm bH 2.5 GHz Quadrature Up-Converter Description ulator and mixer. The RF ports are single ended and the device can be operated adjustment free, but for optimization also two pins for phase adjustment are provided. These features and the double conversion concept of U2891B make this device perfectly suited for all digital radio applications from 900 MHz up to 2.5 GHz (e.g., GSM, DCS 1800, JDC, PHP and WLAN). Features Benefits D Low power consumption: 25 mA / 3 V (typical at –8 dBm output level) D Extended talk time due to increased battery life nt s The U2891B is a silicon monolithic IC made with TELEFUNKEN’s advanced UHF process. The IC consists of a 500 MHz I/Q quadrature modulator and a 2.5 GHz mixer. Both parts can be connected via an external filter in order to suppress harmonics and spurious products. The device features 3 V operation, a low current consumption and furthermore two separate power-down functions for mod- D Few external components results in cost and board space saving om po ne D 2.5 GHz output frequency D Excellent sideband suppression by means of duty cycle regeneration and 90° phase control D Separate power-down mode for modulator and mixer D Low LO input level: – 10 dBm (typical) D LO and RF port 50-W single-ended D Adjustment free, hence saves time and cost D One TX Platform for different systems D Reduced costs and space for battery (3-V operation) Case: SSO-24 package Ordering Information: U2891B-AFS, U2891B-AFSG3 (see page 5) Ad ro nic C Block Diagram BBAi BBAi LO 1 50 LO 1 BBBi GND GND 24 1 PDIF PDRF VS SIF 6 14 2 3 4 Lo - Reg. f/2f 5 0° 90° ö Control 13 8, 21, 20 Voltage regulator RFO ȍ 16 22 23 BBBi 10,17 94 8141 e GND 19 18 LP 1 LP 2 7 IFO 11 IFi 12 9 IFi LO2 15 SRF 50 Rev. A2: 04.10.1995 Advanced Information 1 (6) U2891B TELEFUNKEN Semiconductors 1 24 GND BBAi 2 23 BBBi BBAi 3 22 BBBi LO 1 4 21 VS LO 1 5 20 VS SIF 6 19 LP 1 IFO 7 18 LP 2 VS 8 17 GND LO 2 9 16 RFO GND 10 15 SRF 19 LP 1 IFi 11 14 PDIF IFi 12 13 PDRF 20 21 22 23 24 VS VS BBBi BBBi GND om po ne Ad ro nic C 94 8581 e Symbol GND BBAi BBAi LO 1 LO 1 SIF IFO VS LO 2 GND IFi IFi PDRF PDIF SRF RFO GND LP 2 Function Ground Baseband input B inverse Baseband input B LO 1 input LO 1 input inverse Output symmetry IF IF output Supply voltage LO 2 input Ground IF input IF input inverse Power-down RF Power-down IF Output symmetry RF RF output Ground Filter and IF level adjustment Filter and IF level adjustment Supply voltage Supply voltage Baseband input B Baseband input B inverse Ground nt s GND Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Gm bH Pin Description Absolute Maximum Ratings Parameters Supply voltage Pins 8, 20 and 21 Input voltage Pins 2, 3, 4, 5, 9, 11, 12, 22 and 23 Junction temperature Storage temperature range Symbol VS, VSRF Vi Tj Tstg Value 6 0 to VS 125 – 40 to + 125 Unit V V °C °C Symbol VS, VSRF Tamb Value 2.7 to 5.5 – 40 to + 85 Unit V °C Symbol Rthja Value 140 Unit K/W Operating Range Parameters Supply voltage Pins 8, 20 and 21 Ambient temperature range Thermal Resistance Junction ambient 2 (6) Parameters SSO-24 Advanced Information Rev. A2: 04.10.1995 U2891B TELEFUNKEN Semiconductors Parameters Power supply Supply voltage range Supply current Gm bH Electrical Characteristics: General Data Test Conditions / Pin Symbol Min. Pin 8, 20 and 21 Pin 8, 20 and 21, VS = 3 V VS, VSRF IS, ISRF 2.7 Typ. Max. Unit 5.5 V mA Max. Unit 25 Electrical Characteristics: I/Q Modulator Symbol Min. Ad ro nic C Typ. PIFo LORFo VSWRIFo SBSIFo –8 40 1.4 45 VBBi 500 ZBBi fBBi 150 om po ne Parameters Test Conditions / Pin IF output Pin 7 Output level RLP = R LO1 suppression Voltage standing wave ratio Sideband suppression Baseband inputs Pins 2, 3, 22 and 23 Input voltage range (differential) Input impedance Input frequency LO1 input Pins 4 and 5 Frequency range Input level 1) Input impedance Duty cycle range Power-down mode Supply current VPD v 0.5 V Pin 14 Settling time CSPD 100 pF, CLO = 100 pF, CRFo = 1 nF Power down voltage Pin 14 “Power on” VS = 3.5 to 5.5 V VS = 2.7 to 3.5 V “Power down” Power down current Power on Power down nt s Test conditions (unless otherwise specified): VS = 3 V, Tamb = 25°C, referred to test circuit. System impedance Zo = 50 W, fLO1 = 100 MHz, PLO1 = –10 dBm. fLOi PLOi ZiLO DCRLO1 30 – 10 tbd. 0.4 IPD tS VPON dBm dB 2 dB 900 mVpp 200 kW MHz 500 –2 0.6 mA ms <5 10 VS – 0.5 VS VPDN IPON IPDN MHz dBm W VS +0.5 VS +0.5 1 0.15 <1 V V V mA mA Note: 1) Required LO level is a function of the LO frequency Rev. A2: 04.10.1995 Advanced Information 3 (6) U2891B TELEFUNKEN Semiconductors Gm bH Electrical Characteristics: Mixer VS = 3 V, fLO2 = 800 MHz, fIF = 100 MHz, PLO2 = – 10dBm, system impedance Zo = 50 W, Tamb = 25 °C, reference point Pin 10, unless otherwise specified Test Conditions / Pin Pin 16 Pin 9 Pin 9–16 PiLO = – 10 to 0 dBm Pin 16–9 Min. RFO fLO2 50 50 ISLO2-RFo Ad ro nic C Typ. Max. Unit 2500 2500 MHz MHz – 30 dBm ISRFo-LO2 tbd. dB CPo – 1 dB –7 dBm CPi – 1dB PLO2 PiIIP3 –15 –10 –6 dBm dBm dBm VSWRIFi VSWRLO2 VSWRRF PGC NF50 tbd. tbd. tbd. 9 13 dB dB IPD tS <5 10 mA ms om po ne RFo to LO2 Output level Output compression point Pin 16 RPo = R Input level Input compression point 1) Pins 11 and 12 Input LO2 Pin 9 Third order input Pins 11 and 12 intercept point 1) Voltage standing wave ratio (VSWR) Input IF Pins 11 and 12 Input LO2 Pin 9 Output RF Pin 16 Conversion power gain RL = 50 W Noise Figure (SSB) 2) PiLO = – 6 dBm Power-down mode Supply current VPD v 0.5 V Pin 13 Settling time CSPD 100 pF, CLO = 100 pF, CRFo = 1 nF Power down voltage Pin 13 “Power on” VS = 3.5 to 5.5 V VS = 2.7 to 3.5 V “Power down” Power down current Power on Power down Symbol nt s Parameters Operating frequencies RFO frequency LO2 frequency Isolation LO2 spurious at RFo VPON VS – 0.5 VS VPDN IPON IPDN VS +0.5 VS +0.5 1 0.15 <1 V V V mA mA Note: 1) with 50 W termination resistor at Pin 11 2) without termination resistor 4 (6) Advanced Information Rev. A2: 04.10.1995 U2891B TELEFUNKEN Semiconductors Extended Type Number U2891B-AFS U2891B-AFSG3 Package SSO24 SSO24 Gm bH Ordering Information Remarks Rail, MOQ 690 pcs. Tape & reel, MOQ 4000 pcs. Dimensions in mm 95 9943 Ad ro nic C om po ne nt s Package: SSO-24 Rev. A2: 04.10.1995 Advanced Information 5 (6) U2891B TELEFUNKEN Semiconductors It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. Gm bH Ozone Depleting Substances Policy Statement 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. nt s It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. om po ne TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Ad ro nic C TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 6 (6) Advanced Information Rev. A2: 04.10.1995