FDC5661N_F085 ® N-Channel Logic Level PowerTrench MOSFET tm 60V, 4A, 60mΩ Features Applications RDS(on) = 47mΩ at VGS = 10V, ID = 4.3A DC/DC converter RDS(on) = 60mΩ at VGS = 4.5V, ID = 4A Motor Drives Typ Qg(TOT) = 14.5nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant ©2008 Fairchild Semiconductor Corporation FDC5661N_F085 Rev. A 1 www.fairchildsemi.com FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET October 2008 Symbol Drain to Source Voltage VDSS VGS ID PD Parameter Ratings 60 Units V Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V) 4.3 Pulsed 20 Power Dissipation TJ, TSTG Operating and Storage Temperature A 1.6 W -55 to +150 oC Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 30 o 78 oC/W C/W Package Marking and Ordering Information Device Marking .661N Device FDC5661N_F085 Package SSOT-6 Reel Size 7” Tape Width 8mm Quantity 3000 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 60 - - - V - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 1 2.0 3 V ID = 4.3A, VGS= 10V - 38 47 Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 48V, VGS = 0V TA = 150oC μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance ID = 4A, VGS= 4.5V - 46 60 ID = 4.3A, VGS= 10V TJ = 150oC - 69 86 VDS = 25V, VGS = 0V, f = 1MHz - 763 - pF - 68 - pF pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 36 - RG Gate Resistance f = 1MHz - 2.6 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 14.5 19 nC Qgs Gate to Source Gate Charge - 2.4 - nC Qgd Gate to Drain “Miller“ Charge - 2.9 - nC FDC5661N_F085 Rev. A 2 VDD = 30V ID = 4.3A www.fairchildsemi.com FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 17.6 ns td(on) Turn-On Delay Time - 7.2 - ns tr Rise Time - 1.6 - ns td(off) Turn-Off Delay Time - 19.3 - ns tf Fall Time - 3.1 - ns toff Turn-Off Time - - 36 ns ISD = 4.3A - 0.8 1.25 ISD = 2.1A - 0.8 1.0 VDD = 30V, ID = 4.3A VGS = 10V, RGS = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 4.3A, dISD/dt = 100A/μs V - 18.4 24 ns - 10.0 13 nC Notes: 1: This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDC5661N_F085 Rev. A 3 www.fairchildsemi.com FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TA = 25oC unless otherwise noted 5 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 4 3 VGS = 10V 2 VGS = 4.5V 1 o RθJA = 78 C/W 0.0 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 25 150 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 Figure 2. Maximum Continuous Drain Current vs Ambient Temperature Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 78 C/W 0.01 -3 -2 10 10 -1 0 1 2 10 10 10 t, RECTANGULAR PULSE DURATION(s) 3 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 100 VGS = 10V TC = 25oC IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - TC I = I25 125 10 SINGLE PULSE o RθJA = 78 C/W 1 -3 10 -2 10 -1 0 1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 2 10 3 10 Figure 4. Peak Current Capability FDC5661N_F085 Rev. A 4 www.fairchildsemi.com FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 20 10us 10 100us 1 1ms 10ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 0.01 SINGLE PULSE TJ = MAX RATED o TA = 25 C 100ms 1s DC PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 VDD = 5V 12 TJ = 150oC 8 4 0 0.1 1 10 100 300 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 120 20 ID = 4.3A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID, DRAIN CURRENT (A) VGS = 10V VGS = 6V PULSE DURATION = 80μs VGS = 5V DUTY CYCLE = 0.5% MAX VGS = 4.5V 12 VGS = 4V 5 Figure 6. Transfer Characteristics Figure 5. Forward Bias Safe Operating Area 16 TJ = -55oC TJ = 25oC VGS = 3.5V 8 4 90 TJ = 150oC 60 TJ = 25oC VGS = 3V 0 30 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 8 10 1.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 Figure 8. Drain to Source On-Resistance Variation vs Gate to Source Voltage 2.0 1.6 1.4 1.2 1.0 0.8 0.6 -80 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Saturation Characteristics 1.8 2 ID = 4.3A VGS = 10V -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) VGS = VDS ID = 250μA 1.0 0.9 0.8 0.7 0.6 -80 160 Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature FDC5661N_F085 Rev. A 1.1 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 Figure 10. Normalized Gate Threshold Voltage vs Junction Temperature 5 www.fairchildsemi.com FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 1.15 2000 CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250μA 1.10 1.05 1.00 Ciss 1000 Coss 100 Crss 0.95 0.90 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 10 0.1 160 Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 12. Capacitance vs Drain to Source Voltage VGS, GATE TO SOURCE VOLTAGE(V) Figure 14. 10 ID = 4.3A 8 VDD = 20V 6 VDD = 30V 4 VDD = 40V 2 0 0 3 6 9 Qg, GATE CHARGE(nC) 12 15 Figure 13. Gate Charge vs Gate to Source Voltage FDC5661N_F085 Rev. A 6 www.fairchildsemi.com FDC5661N_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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