FDD5810_F085 N-Channel Logic Level Trench® MOSFET! 60V, 36A, 27m" Features Applications ! RDS(ON) = 22m"!#Typ.), VGS = 5V, ID = 29A ! Motor / Body Load Control ! Qg(5) = 13nC (Typ.), VGS = 5V ! ABS Systems ! Low Miller Charge ! Powertrain Management ! Low Qrr Body Diode ! Injection System ! UIS Capability (Single Pulse / Repetitive Pulse) ! DC-DC converters and Off-line UPS ! Qualified to AEC Q101 ! Distributed Power Architecture and VRMs ! RoHS Compliant ! Primary Switch for 12V and 24V systems LE FREE I M ENTATIO LE N MP AD D D G S G D-PAK TO-252 (TO-252) ©2010 Fairchild Semiconductor Corporation FDD5810_F085 Rev. A1 (W) S 1 www.fairchildsemi.com FDD5810_F085 N-Channel Logic Level Trench® MOSFET May 2010 Symbol VDSS Drain to Source Voltage Ratings 60 VGS Gate to Source Voltage $20 V Drain Current Continuous (VGS = 10V) 37 A Drain Current Continuous (VGS = 5V) 33 A Continuous (TA = 25oC, VGS = 10V, with R%JA = 52oC/W) 7.4 A ID Parameter Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Units V Figure 4 A 45 mJ Power Dissipation 72 W Derate above 25oC 0.48 W/oC Operating and Storage Temperature o -55 to 175 C Thermal Characteristics R%JC R%JA Maximum Thermal resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2.1 oC/W 52 oC/W Package Marking and Ordering Information Device Marking FDD5810 Device FDD5810_F085 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 60 - - - V - 1 - - 250 VGS = $20V - - $100 nA V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250&A, VGS = 0V VDS = 48V VGS = 0V TC = 150oC &A On Characteristics VGS(TH) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250&A 1 1.6 2 ID = 32A, VGS = 10V - 18 22 ID = 29A, VGS = 5V - 22 27 ID = 32A, VGS = 10V, TJ = 175oC - 43 53 - 1420 1890 - 150 200 pF - 65 100 pF m" Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1MHz pF RG Gate Resistance f = 1MHz - 3.5 - " Qg Total Gate Charge at 10V VGS = 0V to 10V - 24 34 nC Qg Total Gate Charge at 5V VGS = 0V to 5V - 13 18 nC Qg(th) Threshold Gate Charge VGS = 0V to 1V - 1.3 - nC Qgs Gate to Source Gate Charge - 4.0 - nC Qgs2 Gate Charge Threshold to Plateau - 2.7 - nC Qgd Gate to Drain “Miller” Charge - 5.0 - nC FDD5810_F085 Rev. A1 (W) 2 VDD = 30V ID = 35A www.fairchildsemi.com FDD5810_F085 N-Channel Logic Level Trench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted ton Turn-On Time - - 130 td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 75 - ns VDD = 30V, ID = 35A VGS = 5V, RGS = 11" ns td(off) Turn-Off Delay Time - 26 - ns tf Fall Time - 34 - ns toff Turn-Off Time - - 90 ns Drain-Source Diode Characteristics ISD = 32A - - 1.25 V ISD = 16A - - 1.0 V Reverse Recovery Time IF = 35A, di/dt = 100A/&s - - 39 ns Reverse Recovery Charge IF = 35A, di/dt = 100A/&s - - 35 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Starting TJ = 25°C, L = 110µH, IAS = 28A, VDD = 54V, VGS = 10V. FDD5810_F085 Rev. A1 (W) 3 www.fairchildsemi.com FDD5810_F085 N-Channel Logic Level Trench® MOSFET Switching Characteristics 40 1.0 ID , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 30 VGS = 10V VGS = 5V 20 10 0.2 0 0 25 50 75 100 150 125 0 25 175 50 TC , CASE TEMPERATURE (oC) 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Z%JC, NORMALIZED THERMAL IMPEDANCE 1 PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x R%JC + TC 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 600 TC = 25oC IDM, PEAK CURRENT (A) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 VGS = 5V 30 10-5 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) Figure 4. Peak Current Capability FDD5810_F085 Rev. A1 (W) 4 www.fairchildsemi.com FDD5810_F085 N-Channel Logic Level Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 500 10us 10 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 IAS, AVALANCHE CURRENT (A) ID , DRAIN CURRENT (A) 200 100 SINGLE PULSE 1ms TJ = MAX RATED o TC = 25 C 10ms If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R!' 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC DC 1 0.1 1 10 100 200 0.001 0.01 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 1 10 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 60 60 PULSE DURATION = 80&s DUTY CYCLE = 0.5% MAX VDD = 6V VGS = 4.5V VGS = 10V ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 0.1 tAV, TIME IN AVALANCHE (ms) 40 TJ = 25oC 20 VGS = 5V VGS = 4V 40 VGS = 3.5V 20 VGS = 3V TJ = 175oC PULSE DURATION = 80&s DUTY CYCLE = 0.5% MAX TJ = -55oC 0 2.0 1.0 4.0 3.0 5.0 0 Figure 7. Transfer Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 26 ID = 35A 22 18 ID = 1A 14 6 8 2.4 2.0 2.5 Figure 9. Drain to Source On Resistance vs Gate Voltage and Drain Current PULSE DURATION = 80&s DUTY CYCLE = 0.5% MAX 2.0 1.6 1.2 0.8 0.4 -80 10 VGS, GATE TO SOURCE VOLTAGE (V) FDD5810_F085 Rev. A1 (W) 1.5 2.8 PULSE DURATION = 80&s DUTY CYCLE = 0.5% MAX 4 1.0 Figure 8. Saturation Characteristics 30 2 0.5 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) RDS(ON), DRAIN TO SOURCE ON RESISTANCE (m") TC = 25oC 0 0 ID = 32A VGS = 10V -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDD5810_F085 N-Channel Logic Level Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1.4 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250&A 1.1 0.8 0.5 ID = 250&A 1.1 1.0 0.9 0.2 -80 -40 0 40 80 120 160 -80 200 -40 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 40 80 120 160 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 VGS , GATE TO SOURCE VOLTAGE (V) 10 Ciss C, CAPACITANCE (pF) 0 TJ , JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) 1000 Coss Crss 100 VDD = 30V 8 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 35A ID = 1A 2 VGS = 0V, f = 1MHz 10 0 0.1 1 10 60 0 VDS , DRAIN TO SOURCE VOLTAGE (V) 10 15 20 25 Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Voltage FDD5810_F085 Rev. A1 (W) 5 Figure 14. Gate Charge Waveforms for Constant Gate Current 6 www.fairchildsemi.com FDD5810_F085 N-Channel Logic Level Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted AccuPower! Auto-SPM! Build it Now! CorePLUS! CorePOWER! CROSSVOLT! CTL! Current Transfer Logic! DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax! ESBC! F-PFS! FRFET® SM Global Power Resource Green FPS! Green FPS! e-Series! Gmax! GTO! IntelliMAX! ISOPLANAR! MegaBuck! MICROCOUPLER! MicroFET! MicroPak! MicroPak2! MillerDrive! MotionMax! Motion-SPM! OptoHiT™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series! FACT® FAST® FastvCore! FETBench! FlashWriter®* FPS! ® PDP SPM™ Power-SPM! PowerTrench® PowerXS™ Programmable Active Droop! QFET® QS! Quiet Series! RapidConfigure! ! Saving our world, 1mW/W/kW at a time™ SignalWise! SmartMax! SMART START! SPM® STEALTH! SuperFET! SuperSOT!-3 SuperSOT!-6 SuperSOT!-8 SupreMOS! SyncFET! Sync-Lock™ ® * The Power Franchise® TinyBoost! TinyBuck! TinyCalc! 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