FDMQ8403 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET 100 V, 6 A, 110 mΩ Features General Description This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD solutions Application RoHS Compliant High-Efficiency Bridge Rectifiers Bottom Top G4 D1/D4 D3/S4 G3 S3 S3 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 D1/D4 D3/ S4 S1/ D2 S3 7 Q3 6 S2 Q2 S3 8 5 S2 G3 9 4 G2 D3/S4 10 Q4 Q1 3 S1/D2 D1/D4 11 2 D1/D4 12 1 G1 G4 MLP 4.5x5 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C TJ, TSTG Units V ±20 V 6 9 (Note 1a) -Pulsed PD Ratings 100 3.1 A 12 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 17 (Note 1a) Operating and Storage Junction Temperature Range 1.9 -55 to +150 W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 65 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 135 °C/W Package Marking and Ordering Information Device Marking FDMQ8403 Device FDMQ8403 ©2012 Fairchild Semiconductor Corporation FDMQ8403 Rev.C2 Package MLP 4.5x5 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMQ8403 N-Channel PowerTrench® MOSFET July 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 72 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 3 A 85 110 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 2.4 A 115 175 VGS = 10 V, ID = 3 A, TJ = 125 °C 147 191 gFS Forward Transconductance 2 VDS = 10 V, ID = 3 A 2.8 -8 mV/°C 6 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz 162 215 pF 43 60 pF 2.6 5 pF 4.1 10 ns 1.2 10 ns 7.2 15 ns 1.8 10 ns 3 5 nC 1.7 3 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 3 A, VGS = 10 V, RGEN = 6 Ω VDD = 50 V, ID = 3 A nC 0.9 nC 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3 A IF = 3 A, di/dt = 100 A/μs (Note 2) 0.86 1.3 V 33 53 ns 23 37 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper. the board designed Q1+Q3 or Q2+Q4. b. 135 °C/W when mounted on a minimum pad of 2 oz copper. the board designed Q1+Q3 or Q2+Q4. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ©2012 Fairchild Semiconductor Corporation FDMQ8403 Rev.C2 2 www.fairchildsemi.com FDMQ8403 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V VGS = 8 V VGS = 7 V 9 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 12 VGS = 6 V 6 VGS = 5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 6 V 3 2 VGS = 7 V 1 VGS = 8 V 0 3 6 9 12 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 400 ID = 3 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 0 5 VDS, DRAIN TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5 V TJ = 150 oC 6 TJ = 25 oC 3 = -55 oC 0 4 5 6 TJ = 125 oC 100 TJ = 25 oC 5 6 7 8 9 20 10 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.2 7 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMQ8403 Rev.C2 10 Figure 4. On-Resistance vs Gate to Source Voltage 9 3 200 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 300 4 12 TJ ID = 3 A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 5 V 4 3 1.2 www.fairchildsemi.com FDMQ8403 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 3 A VDD = 50 V 8 VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 4 100 Ciss Coss 10 2 f = 1 MHz VGS = 0 V 0 0 0.5 1.0 1.5 2.0 2.5 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 500 P(PK), PEAK TRANSIENT POWER (W) 20 10 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 us 1 0.1 Crss 1 0.1 3.0 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 0.01 0.005 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 135 oC/W 10 s TA = 25 oC DC 1 10 100 300 100 10 SINGLE PULSE RθJA = 135 oC/W 1 TA = 25 oC 0.5 -4 10 10 -3 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation Figure 9. Forward Bias Safe Operating Area 2 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMQ8403 Rev.C2 4 www.fairchildsemi.com FDMQ8403 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMQ8403 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMQ8403 Rev.C2 5 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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I61 ©2012 Fairchild Semiconductor Corporation FDMQ8403 Rev.C2 6 www.fairchildsemi.com FDMQ8403 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® AccuPower™ PowerXS™ FRFET® Global Power ResourceSM AX-CAP™* Programmable Active Droop™ Green Bridge™ BitSiC® QFET® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™