FDC8878 N-Channel PowerTrench® MOSFET 30 V, 8.0 A, 16 mΩ Features General Description Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant Applications Primary Switch S D S 4 3 G D 5 2 D D 6 1 D D G D Pin 1 D SuperSOTTM -6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 3) Drain Current -Continuous (Package limited) TC = 25 °C ID TA = 25 °C -Continuous TJ, TSTG Units V ±20 V 8.0 (Note 1a) -Pulsed PD Ratings 30 8.0 A 32 Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.8 Operating and Storage Junction Temperature Range -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 30 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking .888 Device FDC8878 ©2012 Fairchild Semiconductor Corporation FDC8878 Rev.C2 Package SSOT-6 Reel Size 7 ’’ 1 Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDC8878 N-Channel PowerTrench® MOSFET January 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 13 mV/°C 1 μA 100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 8.0 A 12 16 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 7.5 A 14 18 VGS = 10 V, ID = 8.0 A, TJ = 125 °C 16 21 VDD = 5 V, ID = 8.0 A 43 VDS = 15 V, VGS = 0 V, f = 1 MHz 782 1040 pF 318 425 pF 40 60 pF gFS Forward Transconductance 1.2 1.6 -5 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) 6 12 2 10 ns ns 17 30 ns VDD = 15 V, ID = 8 A, VGS = 10 V, RGEN = 6 Ω 2 10 ns Total Gate Charge VGS = 0 V to 10 V 13 18 nC Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 8 A 6 9 1.7 nC 2.0 nC Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8.0 A (Note 2) IF = 8.0 A, di/dt = 100 A/μs 0.8 1.2 V 22 35 ns 7 14 nC NOTES: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.175 °C/W when mounted on a minimum pad of 2 oz copper a. 78 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2012 Fairchild Semiconductor Corporation FDC8878 Rev.C2 2 www.fairchildsemi.com FDC8878 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 32 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V VGS = 4.5 V 24 VGS = 3.5 V VGS = 3 V 16 8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.3 0.6 0.9 1.2 1.5 2.0 VGS = 3.5 V 1.5 VGS = 4.5 V 1.0 0.5 0 8 rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 32 50 ID = 8 A VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 ID = 8 A 30 TJ = 125 oC 20 10 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) TJ = 25 oC 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 100 32 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 24 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 VDS = 5 V 24 TJ = 150 oC 16 TJ = 25 oC 8 TJ = -55 oC 0 16 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics -50 VGS = 10 V VGS = 6 V VDS, DRAIN TO SOURCE VOLTAGE (V) 0.6 -75 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3 V 1 2 3 TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.1 0 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDC8878 Rev.C2 VGS = 0 V 3 www.fairchildsemi.com FDC8878 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 ID = 8 A 1000 8 VDD = 10 V Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 15 V 4 VDD = 20 V Coss 100 2 f = 1 MHz VGS = 0 V 0 0 3 6 9 12 10 0.1 15 1 Figure 7. Gate Charge Characteristics 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 20 10 TJ = 25 oC TJ = 100 oC TJ = 125 1 0.001 0.01 0.1 8 VGS = 10 V 6 VGS = 4.5 V 4 2 o oC RθJA = 78 C/W 1 10 0 25 100 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continous Drain Current vs. Ambient Temperature 1000 10 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 us 1 0.1 Crss 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms SINGLE PULSE TJ = MAX RATED 100 ms 1s 10 s DC RθJA = 175 oC/W TA = 25 oC 0.01 0.01 0.1 1 10 100 TA = 25 oC 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDC8878 Rev.C2 SINGLE PULSE RθJA = 175 oC/W 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDC8878 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 175 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDC8878 Rev.C2 5 www.fairchildsemi.com FDC8878 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDC8878 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDC8878 Rev.C2 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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I61 ©2012 Fairchild Semiconductor Corporation FDC8878 Rev.C2 7 www.fairchildsemi.com FDC8878 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ F-PFS™ PowerTrench® The Power Franchise® ® PowerXS™ AccuPower™ FRFET® Global Power ResourceSM Programmable Active Droop™ AX-CAP™* Green Bridge™ QFET® BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™