TOSHIBA Discrete Semiconductors 2SK1358 Industrial Applications Field Effect Transistor Unit in mm Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.) • High Forward Transfer Admittance - Yfs = 4.0S (Typ.) • Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V • Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 900 V Drain-Gate Voltage (RGS = 20kΩ) VDGR 900 V Gate-Source Voltage VGSS ±30 V DC ID 9 A Pulse IDP 27 Drain Power Dissipation (Tc = 25°C) PD 150 W Channel Temperature Tch 150 °C Storage Temperature Range Tstg -55 ~ 150 °C SYMBOL MAX. UNIT Thermal Resistance, Channel to Case Rth(ch-c) 0.833 °C/W Thermal Resistance, Channel to Ambient Rth(ch-a) 50 °C/W Drain Current Thermal Characteristics CHARACTERISTIC This transistor is an electrostatic sensitive device. Please handle with care. TOSHIBA CORPORATION 1/6 2SK1358 Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Gate Leakage Current IGSS VGS = ±25V, VDS = 0V – – ±100 nA Drain Cut-off Current IDSS VDS = 720V, VGS = 0V – – 300 µA V(BR) DSS ID = 10mA, VGS = 0V 900 – – V Vth VDS = 10V, ID = 1mA 1.5 – 3.5 V Drain-Source ON Resistance RDS (ON) ID = 4A, VGS = 10V – 1.1 1.4 Ω Forward Transfer Admittance Yfs VDS = 20V, ID = 4A 2.0 4.0 – S Input Capacitance Ciss – 1300 1800 – 100 150 Drain-Source Breakdown Voltage Gate Threshold Voltage VDS = 25V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Crss Output Capacitance Coss – 180 260 Rise Time tr – 25 50 Switching Time pF Turn-on Time ton – 40 80 Fall Time tf – 20 40 Turn-off Time toff – 100 200 – 120 240 – 70 – – 50 – MAX. UNIT Total Gate Charge (Gate-Source Plus Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (“Miller”) Charge Qgd VDD = 400V, VGS = 10V, ID = 9A ns nC Source-Drain Diode Ratings and Characteristics (Ta = 25°C) CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. Continuous Drain Reverse Current IDR – – – 9 A Pulse Drain Reverse Current IDRP – – – 27 A Diode Forward Voltage VDSF – – -2.0 V 2/6 IDR = 9A, VGS = 0V TOSHIBA CORPORATION 2SK1358 TOSHIBA CORPORATION 3/6 2SK1358 4/6 TOSHIBA CORPORATION 2SK1358 TOSHIBA CORPORATION 5/6 2SK1358 f Notes The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA. 6/6 TOSHIBA CORPORATION