2SK2229 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2SK2229 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance : |Yfs| = 5.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V Gate−source voltage VGSS ±20 V ID 5 A Drain current DC (Note 1) IDP 20 A Drain power dissipation Pulse (Note 1) PD 1.3 W Single pulse avalanche energy (Note 2) EAS 129 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 0.13 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Symbol Max Unit Rth (ch−a) 96.1 °C / W JEDEC ― JEITA ― TOSHIBA 2-8M1B Weight: 0.54 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to ambient Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 7 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK2229 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cut−off current IDSS VDS = 60 V, VGS = 0 V — — 100 µA V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance RDS (ON) Forward transfer admittance |Yfs| VGS = 4 V, ID = 1.3 A — 0.20 0.30 VGS = 10 V, ID = 2.5 A — 0.12 0.16 VDS = 10 V, ID = 2.5 A 3.0 5.0 — — 370 — — 60 — Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss — 180 — tr — 18 — ton — 25 — tf — 55 — toff — 170 — Total gate charge (Gate−source plus gate−drain) Qg — 12 — Gate−source charge Qgs — 8 — Gate−drain (“miller”) charge Qgd — 4 — Rise time Turn−on time VDS = 10 V, VGS = 0 V, f = 1 MHz Switching time Ω S pF ns Fall time Turn−off time VDD ≈ 48 V, VGS = 10 V, ID = 5 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 5 A Pulse drain reverse current (Note 1) IDRP — — — 20 A Forward voltage (diode) VDSF — — −1.7 V Reverse recovery time trr — 70 — ns Reverse recovered charge Qrr — 0.1 — µC IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR/dt = 50 A/µs Marking K2229 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK2229 3 2004-07-06 2SK2229 4 2004-07-06 2SK2229 Safe Operating Area 100 100 µs * ID max (pulsed) * 1 ms * 10 Drain Current ID (A) ID max (Continuous) 10 ms * 1 DC Operation Ta = 25°C 0.1 0.01 *: Single Nonrepetitive Pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.001 0.01 0.1 VDSS max 1 Drain-Source Voltage 10 100 VDS (V) RG = 25 Ω VDD = 25 V, L = 7 mH 5 EAS = 1 B VDSS ⎞ ⎛ ⋅ L ⋅ I2 ⋅ ⎜ ⎟ − 2 B V DD ⎠ ⎝ VDSS 2004-07-06 2SK2229 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-06