2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage VDSS −60 V Drain−gate voltage (RGS = 20 kΩ) VDGR −60 V Gate−source voltage VGSS ±20 V ID −5 A Drain current DC (Note 1) IDP −20 A Drain power dissipation (Tc = 25°C) Pulse (Note 1) PD 20 W JEDEC Single-pulse avalanche energy (Note 2) EAS 273 mJ JEITA SC-64 Avalanche current IAR −5 A TOSHIBA 2-7B1B Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W ― Weight: 0.36 g (typ.) Thermal Characteristics Characteristic Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. JEDEC ― JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2005-03-04 2SJ377 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cutoff current IDSS VDS = −60 V, VGS = 0 V — — −100 µA Drain−source breakdown voltage Gate threshold voltage V (BR) DSS ID = −10 mA, VGS = 0 V −60 — — V Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V VGS = −4 V, ID = −2.5 A — 0.24 0.28 VGS = −10 V, ID = −2.5 A — 0.16 0.19 VDS = −10 V, ID = −2.5 A 2.0 4.0 — — 630 — Drain−source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss VDS = −10 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss — 95 — Output capacitance Coss — 290 — tr — 25 — ton — 45 — Rise time Turn−on time Switching time Ω S pF ns Fall time Turn−off time Total gate charge (Gate−source plus gate−drain) tf — 55 — toff — 200 — — 22 — — 16 — — 6 — Qg Gate−source charge Qgs Gate−drain (“Miller”) charge Qgd VDD ≈ −48 V, VGS = −10 V, ID = −5 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −5 A Pulse drain reverse current (Note 1) IDRP — — — −20 A Forward voltage (diode) VDSF IDR = −5 A, VGS = 0 V — — 1.7 V trr IDR = −5 A, VGS = 0 V dlDR / dt = 50 A / µS — 80 — ns — 0.1 — µC Reverse recovery time Reverse recovery charge Qrr Marking J377 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-03-04 2SJ377 3 2005-03-04 2SJ377 4 2005-03-04 2SJ377 5 2005-03-04 2SJ377 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2005-03-04