2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain−source ON resistance : RDS (ON) = 0.085 Ω (typ.) High forward transfer admittance : |Yfs| = 35 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 500 V) Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 500 V Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V Gate−source voltage VGSS ±30 V ID 50 A IDP 200 A Drain power dissipation (Tc = 25°C) PD 250 W Single pulse avalanche energy (Note 2) EAS 525 mJ Avalanche current IAR 50 A Repetitive avalanche energy (Note 3) EAR 25 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 0.5 °C / W Thermal resistance, channel to ambient Rth (ch−a) 35.7 °C / W DC Drain current DC (Note 1) Pulse (Note 1) JEDEC — JEITA — TOSHIBA 2-21F1B Weight: 9.75 g (typ.) Thermal Characteristics Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 µH, RG = 25 Ω, IAR = 50 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK3131 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Symbol Test Condition Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V — — ±10 µA V (BR) GSS IG = ±100 µA, VDS = 0 V ±30 — — V IDSS VDS = 500 V, VGS = 0 V — — 100 µA V (BR) DSS ID = 10 mA, VGS = 0 V 500 — — V Vth VDS = 10 V, ID = 1 mA 2.4 — 3.4 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 25 A — 0.085 0.11 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 15 35 — S Input capacitance Ciss — 11000 — Drain−source breakdown voltage Gate threshold voltage VDS = 10 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss — 2100 — Output capacitance Coss — 4200 — tr — 105 — ton — 160 — tf — 65 — toff — 245 — Total gate charge (Gate−source plus gate−drain) Qg — 280 — Gate−source charge Qgs — 150 — Gate−drain (“miller”) charge Qgd — 130 — Rise time Turn−on time pF Switching time ns Fall time Turn−off time VDD ≈ 400 V, VGS = 10 V, ID = 50 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 50 A Pulse drain reverse current (Note 1) IDRP — — — 200 A Forward voltage (diode) VDSF VDR = 25 A, VGS = 0 V — — −1.7 V Reverse recovery time trr 105 — ns Reverse recovery charge Qrr IDR = 50 A, VGS = 0 V dIDR / dt = 100 A / µs — — 380 — nC Marking Part No. (or abbreviation code) TOSHIBA 2SK3131 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK3131 3 2004-07-06 2SK3131 4 2004-07-06 2SK3131 RG = 25 Ω VDD = 90 V, L = 357 µH 5 EAS = 1 BVDSS ⎞ ⎛ ⋅ L ⋅ I2 ⋅ ⎜ ⎟ 2 ⎝ BVDSS − VDD ⎠ 2004-07-06 2SK3131 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-06