2SK3067 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3067 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.) l High forward transfer admittance : |Yfs| = 1.7 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 600 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 600 V Drain−gate voltage (RGS = 20 kΩ) VDGR 600 V Gate−source voltage VGSS ±30 V (Note 1) ID 2 A Pulse (t = 1 ms) (Note 1) IDP 5 A Pulse (t = 100 µs) (Note 1) IDP 8 A Drain power dissipation PD 25 W Single pulse avalanche energy (Note 2) EAS 93 mJ Avalanche current IAR 2 A Repetitive avalanche energy (Note 3) EAR 2.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Symbol Max Unit Thermal reverse, channel to case Rth (ch−c) 5.0 °C / W Thermal reverse, channel to ambient Rth (ch−a) 62.5 °C / W DC Drain current JEDEC — JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Electrical Characteristics (Tc = 25°C) Characteristics Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-06-05 2SK3067 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Symbol Test Condition Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V — — ±10 µA V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 — — V IDSS VDS = 600 V, VGS = 0 V — — 100 µA V (BR) DSS ID = 10 mA, VGS = 0 V 600 — — V Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 1 A — 4.2 5.0 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 1 A 0.8 1.7 — S Input capacitance Ciss — 380 — Reverse transfer capacitance Crss — 40 — Output capacitance Coss — 120 — tr — 15 — ton — 25 — Rise time Turn−on time VDS = 10 V, VGS = 0 V, f = 1 MHz pF ns Switching time Fall time tf — 20 — toff — 80 — Total gate charge (Gate−source plus gate−drain) Qg — 9 — Gate−source charge Qgs — 5 — Gate−drain (“miller”) charge Qgd — 4 — Turn−off time VDD ≈ 480 V, VGS = 10 V, ID = 2 A nC Source−Drain Ratings and Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 2 A IDRP t = 1 ms — — 5 A IDRP t = 100 µs — — 8 A Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V — — −1.5 V Reverse recovery time trr — 1000 — ns Reverse recovery charge Qrr IDR = 2 A, VGS = 0 V dIDR / dt = 100 A / µs — 5.0 — µC Pulse drain reverse current (Note 1) Marking 2 2002-06-05 2SK3067 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 2002-06-05 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.