TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage VGSS ±30 V (Note 1) ID 5 Pulse (t = 1 ms) (Note 1) IDP 20 Drain power dissipation (Tc = 25°C) PD 35 W Single pulse avalanche energy (Note 2) EAS 180 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C 0.69±0.15 A Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W 2.54±0.25 1. 2. 3. 2.6 1 2 3 0.64±0.15 DC Drain current 2.54±0.25 4.5±0.2 Characteristics 1.1 1.1 12.5 Min. Maximum Ratings (Ta = 25°C) 2.7±0.2 15.0±0.3 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 2.8Max • • • • φ3.2±0.2 Gate Drain Source JEDEC ― JEITA ― TOSHIBA ― 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 12.2 mH, IAR = 5 A, RG = 25 Ω 1 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2003-01-27 2SK3563 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ±10 µA V (BR) GSS ID = ±10 µA, VGS = 0 V ±30 V IDSS VDS = 500 V, VGS = 0 V 100 µA Gate leakage current Gate-source breakdown voltage Test Condition Drain cut-off current V (BR) DSS ID = 10 mA, VGS = 0 V 500 V Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2.5 A 1.35 1.50 Ω Forward transfer admittance Yfs VDS = 10 V, ID = 2.5 A 1.5 3.5 S Input capacitance Ciss 550 Reverse transfer capacitance Crss 7 Output capacitance Coss 70 VOUT 10 RL = 90 Ω 20 10 50 16 10 6 Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 15 Ω Switching time Fall time ID = 2.5 A 10 V VGS 0V tr tf Turn-off time VDD ∼ − 225 V Duty < = 1%, tw = 10 µs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 5 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR 5 A (Note 1) IDRP 20 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V −1.7 V Reverse recovery time trr IDR = 5 A, VGS = 0 V, 1400 ns Reverse recovery charge Qrr dIDR/dt = 100 A/µs 9 µC Marking K3563 ※ TYPE ※ Lot Number Month (Starting from Alphabet A) Year (Last Number of the Christian Era) 2 2003-01-27 TENTATIVE 2SK3563 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 3 2003-01-27