TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TPCS8006 High-Speed Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.6 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 250 V) • Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS ±20 V (Note 1) ID 1.1 Pulse (Note 1) IDP 4.4 Drain power dissipation (t = 10 s) (Note 2a) PD 1.5 Drain power dissipation (t = 10 s) (Note 2b) PD 0.6 Single pulse avalanche energy(Note3) EAS 0.07 mJ Avalanche current IAR 1.1 A Repetitive avalanche energy (Note2a, Note 4) EAR 0.15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current DC A W 1.2.3. Gate 4 Source 5.6.7.8 Drain JEDEC ― JEITA ― TOSHIBA 2-3R1F Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPCS8006 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 83.3 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 208 °C/W Marking (Note 5) Part No. (or abbreviation code) S8006 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 1.1 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: ○ on lower right of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2004-07-06 TPCS8006 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = 250 V, VGS = 0 V ⎯ ⎯ 100 µA V (BR) DSS ID = 10 mA, VGS = 0 V 250 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 1.5 ⎯ 3.5 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 0.5 A ⎯ 0.8 1.0 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 0.5 A 0.7 1.6 ⎯ S Input capacitance Ciss ⎯ 380 ⎯ pF Reverse transfer capacitance Crss ⎯ 32 ⎯ pF Output capacitance Coss ⎯ 105 ⎯ pF ⎯ 11 ⎯ ⎯ 20 ⎯ ⎯ 15 ⎯ ⎯ 45 ⎯ ⎯ 11 ⎯ nC ⎯ 7 ⎯ nC ⎯ 4 ⎯ nC Gate threshold voltage Rise time tr Turn-ON time ton VDS = 10 V, VGS = 0 V, f = 1 MHz 4.7 Ω Switching time Fall time tf Turn-OFF time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = 0.5 A VOUT VGS 10 V 0V RL = 200 Ω Drain-source breakdown voltage ns VDD ∼ − 100 V Duty < = 1%, tw = 10 µs VDD ∼ − 200V, VGS = 10 V, ID = 1.1 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current (pulse) (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 4.4 A Forward voltage (diode) VDSF IDR = 1.1 A, VGS = 0 V ⎯ ⎯ −2.0 V Reverse recovery time trr IDR = 1.1 A, VGS = 0 V, ⎯ 100 ⎯ ns Qrr dIDR/dt = 100 A/µs ⎯ 320 ⎯ nC Reverse recovery charge 3 2004-07-06 TPCS8006 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-06