TOSHIBA 2SK3132

2SK3132
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3132
Chopper Regulator DC−DC Converter, and Motor Drive
Applications
l Low drain−source ON resistance
: RDS (ON) = 0.07 Ω (typ.)
l High forward transfer admittance
: |Yfs| = 33 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 500 V)
l Enhancement−mode
: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
500
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate−source voltage
VGSS
±30
V
(Note 1)
ID
50
A
Pulse (Note 1)
IDP
200
A
Drain power dissipation (Tc = 25°C)
PD
250
W
Single pulse avalanche energy
(Note 2)
EAS
525
mJ
Avalanche current
IAR
50
A
Repetitive avalanche energy (Note 3)
EAR
25
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
0.5
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
35.7
°C / W
DCDrain current
DC
JEDEC
—
JEITA
—
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Thermal Characteristics
Characteristics
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 µH, RG = 25 Ω, IAR = 50 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-01-25
2SK3132
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±25 V, VDS = 0 V
—
—
±10
µA
V (BR) GSS
IG = ±10 µA, VDS = 0 V
±30
—
—
V
IDSS
VDS = 500 V, VGS = 0 V
—
—
100
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
—
V
Vth
VDS = 10 V, ID = 1 mA
2.4
—
3.4
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
—
0.07
0.095
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
15
33
—
S
Input capacitance
Ciss
—
11000
—
Reverse transfer capacitance
Crss
—
2100
—
Output capacitance
Coss
—
4200
—
tr
—
105
—
ton
—
160
—
Gate threshold voltage
Rise time
Turn−on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
Switching time
pF
ns
Fall time
tf
—
65
—
toff
—
245
—
Total gate charge (Gate−source
plus gate−drain)
Qg
—
280
—
Gate−source charge
Qgs
—
150
—
Gate−drain (“miller”) charge
Qgd
—
130
—
Min
Typ.
Max
Unit
—
—
50
A
—
—
200
A
Turn−off time
VDD ≈ 400 V, VGS = 10 V, ID = 50 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
(Note 1)
IDR
Pulse drain reverse current
(Note 1)
IDRP
Forward voltage (diode)
VDSF
IDR = 25 A, VGS = 0 V
—
—
−1.7
V
Reverse recovery time
trr
—
600
—
ns
Reverse recovery charge
Qrr
IDR = 50 A, VGS = 0 V
dIDR / dt = 100 A / µs
—
12
—
µC
—
—
Marking
TOSHIBA
2SK3132
※
Type
※ Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
2
2002-01-25
2SK3132
3
2002-01-25
2SK3132
4
2002-01-25
2SK3132
RG = 25 Ω
VDD = 90 V, L = 357 µH
5
EAS =
1
BVDSS
æ
ö
× L × I2 × ç
÷
2
è BVDSS - VDD ø
2002-01-25
2SK3132
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-01-25