FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time Equivalent Circuit C B TO-126 1 1.Emitter 2.Collector Absolute Maximum Ratings Symbol E 3.Base TC = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 4 A ICP * Collector Current (Pulse) 8 A IB Base Current (DC) 2 A IBP * Base Current (Pulse) PC Collector Dissipation (TC=25°C) TSTG Storage Temperature 4 A 30 W - 65 ~ 150 °C * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0% Electrical Characteristics T Symbol C= 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 ICES Collector Cut-off Current VCE = 700V, VEB = 0 V 100 µA ICEO Collector Cut-off Current VCE = 400V, IB = 0 250 µA IEBO Emitter Cut-off Current VEB = 12V, IC = 0 100 µA hFE DC Current Gain VCE = 5V, IC = 10mA VCE = 5V, IC = 2A ©2005 Fairchild Semiconductor Corporation FJE5304D Rev. B1 1 10 8 40 www.fairchildsemi.com Symbol C= 25°C unless otherwise noted Max. Units VCE(sat) Collector-Emitter Saturation Voltage Parameter IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A Test Condition Min. Typ. 0.7 1.0 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A 1.1 1.2 1.3 V Vf Internal Diode Forward Voltage Drop IF = 2A 2.5 V Inductive Load Switching (VCC = 200V) tstg Storage Time tf Fall Time µs 0.6 IC = 2A, IB1 = 0.4A VBE(off) = -5V, L = 200µH 0.1 Resistive Load Switching (VCC = 250V) tstg Storage Time tf Fall Time µs 2.9 IC = 2A, IB1 = IB2 = 0.4A TP = 30µs 0.2 * Pulse test: PW ≤ 300µs, Duty cycle ≤ 2% Thermal Characteristics Symbol TC = 25°C unless otherwise noted Parameter Max. Units RθJC Thermal Resistance, Junction to Case 4.17 °C/W RθJA Thermal Resistance, Junction to Ambient 83.3 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FJE5304D FJE5304D TO-126 -- -- -- FJE5304D Rev. B1 2 www.fairchildsemi.com FJE5304D NPN Triple Diffused Planar Silicon Transistor Electrical Characteristics (Continued) T Figure 1. Static Characteristic Figure 2. DC Current Gain 100 Vce=5V IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA 4 3 o Ta=125 C hFE,DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 IB = 100mA 2 IB = 50mA 1 0 o 25 C 10 IB = 0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 3. Collector-Emitter Saturation Voltage O 1 O Ta=125 C O -25 C 0.1 1 Ic=5IB VBE[V],SATURATION VOLTAGE VCE(sat)[V],SATURATION VOLTAGE 10 25 C 0.1 10 Figure 4. Base-Emitter Saturation Voltage Ic=5IB 0.01 0.01 1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 10 o -25 C 1 O -25 C O 25 C O Ta=125 C 0.1 0.01 10 0.1 IC[A], COLLECTOR CURRENT 1 10 IC[A], COLLECTOR CURRENT Figure 5. Resitive Load Switching Time Figure 6. Inductive Load Switching Time 1000 10 VCC = 250V IC = 5IB1 = -5IB2 tSTG tSTG, tF [ns], TIME tSTG, tF [µs], TIME tSTG 1 tF 0.1 0.01 0.1 tF VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1 1 10 0.1 10 IC[A], COLLECTOR CURRENT FJE5304D Rev. B1 100 1 10 IC[A], COLLECTOR CURRENT 3 www.fairchildsemi.com FJE5304D NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area 100 100 o 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT TC=25 C 1µs 10µs 1ms 1 DC 0.1 0.01 10 100 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1 0.1 0.01 10 1000 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Power Derating PC[W], POWER DISSIPATION 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE FJE5304D Rev. B1 4 www.fairchildsemi.com FJE5304D NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics FJE5304D NPN Triple Diffused Planar Silicon Transistor Mechanical Dimensions 8.00 ±0.30 ±0.20 3.25 ±0.20 ø3.20 ±0.10 11.00 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 1.75 ±0.20 13.06 0.75 ±0.10 16.10 ±0.30 ±0.20 1.60 ±0.10 #1 2.28TYP [2.28±0.20] +0.10 0.50 –0.05 2.28TYP [2.28±0.20] Dimensions in Millimeters FJE5304D Rev. B1 5 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 6 FJE5304D Rev. B1 www.fairchildsemi.com FJE5304D NPN Triple Diffused Planar Silicon Transistor TRADEMARKS