Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -5 A ICP * -10 A W Collector current Collector current(Pulse) Collector power dissipation PC 0.5 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse, Pw=10ms Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -30 V Collector-emitter breakdown voltage BVCEO IC=-1mA -20 V Emitter-base breakdown voltage -6 BVEBO IE=-50ìA Collector cutoff current ICBO VCB=-20V -0.5 ìA V Emitter cutoff current IEBO VEB=-5V -0.5 ìA -1 V VCE(sat) IC=-4A,IB=-0.1A DC current transfer ratio Collector-emitter saturation voltage hFE VCE=-2V, IC=-0.5A 82 390 Transition frequency Cob VCE=-6V, IE=50mA, f=30MHz 120 MHz Output capacitance fT VCB=-20V, IE=0A, f=1MHz 60 pF hFE Classification BH Marking Rank P Q R hFE 82 180 120 270 180 390 www.kexin.com.cn 1