CALOGIC SD202DC

High-Speed Analog
N-Channel Enhancement-Mode
DMOS FETS
CORPORATION
SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203
FEATURES
• High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz
• Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz
(SD202, SD203, SSTSD203)
Low Interelectrode Capacitances
APPLICATIONS
• High Gain VHF/UHF Amplifiers
• Oscillators
• Mixers
DESCRIPTION
The SD200 series is manufactured utilizing Calogic’s
proprietary DMOS design and processing techniques. The
device is designed to operate well through 1 GHz while
maintaining excellent frequency response, power gain, and
low noise. The DMOS structure is an inherently low
capacitance and very high speed design resulting in a device
that bridges JFETS and GaAs products in performance
characteristics.
ORDERING INFORMATION
Part
Package
SD200DC
SD201DC
SD202DC
SD203DC
SSTSD201
SSTSD203
XSD200
XSD201
XSD202
XSD203
4 Lead TO-52 Package
4 Lead TO-52 Package
4 Lead TO-52 Package
4 Lead TO-52 Package
Surface Mount SOT-143
Surface Mount SOT-143
Sorted Chips in Carriers
Sorted Chips in Carriers
Sorted Chips in Carriers
Sorted Chips in Carriers
PIN CONFIGURATION
Temperature Range
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
SCHEMATIC DIAGRAM
(2)
DRAIN
(4)
CASE, BODY
CD10-1
CD10-2
SD201, SD203, zener protected
SD202, SD204, non-zener
(3)
GATE
CASE, B
G
D
S
(1)
SOURCE
GATE (3)
DRAIN (2)
BODY (4)
SOT-143
SOURCE (1)
PART MARKINGS (SOT-143)
P/N
MARKING
SSTSD201
201
SSTSD203
203
BODY INTERNALLY CONNECTED TO CASE.
DIODE PROTECTION ON SD201/SD203 ONLY.
SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203
CORPORATION
ABSOLUTE MAXIMUM RATING (TA = +25oC unless otherwise noted)
PARAMETER
Breakdown
Voltages
SD200 SD201 SD202 SD203
VDS
VDB
VGS
+25
+25
±40
VGB
±40
VGD
±40
+25
+25
-0.3
+20
-0.3
+20
-0.3
+20
+20
+20
±40
±40
±40
UNIT
+20
+20
-0.3
+20
-0.3
+20
-0.3
+20
Continuous Drain Current . . . . . . . . . . . . . . . . . . 50 mA
Power Dissipation (at or below TC = +25oC) . . . . 1.8 W
Linear Derating Factor . . . . . . . . . . . . . . . . . 18 mW/ oC
Power Dissipation (at or below TA = +25C) . . . 360 mW
Linear Derating Factor . . . . . . . . . . . . . . . . . 3.6 mW/ oC
Operating Junction
Temperature Range . . . . . . . . . . . . . . -55oC to + 125oC
Storage Temperature Range . . . . . . . . -65oC to +175oC
ID
PT
PD
V
V
V
V
V
V
V
V
Tj
Ts
ELECTRICAL CHARACTERISTICS (TA = +25oC unless otherwise noted)
200, 201
SYMBOL
202, 203
PARAMETER
UNIT
MIN
TYP
30
MAX
MIN
TYP
20
25
TEST CONDITIONS
MAX
STATIC
BVDS
Drain-Source Breakdown Voltage
25
BVDB
Drain-Body Breakdown Voltage
25
ID(OFF)
Drain-Source
OFF Current
IGBS
20
1.0
ID = 1.0µA, VGS = VBS = 0
V
ID = 1.0µA, VGB = 0
Source OPEN
µA
1.0
±0.1
SD200
Gate-Body
Leakage
Current
V
SD201
nA
1.0
SD203
VGS(th)
Gate Threshold Voltage
rDS(ON)
Drain-Source ON Resistance
VGS = VBS = 0
VDS = 20 V
±0.1
SD202
VDS = 25 V
VGV = ±40 V
VDB = VSB = 0
µA
VGB = 20 V
1.0
0.1
1.0
2.0
40
70
0.1
1.0
2.0
V
VDS = VGS, ID = 1µA, VSB = 0
35
50
ohms
VGS = 5 V, ID = 1 mA, VSB = 0
DYNAMIC
gfs
Common-Source Forward
Transcondconductance
ciss
Common-Source Input Capacitance
2.4
3.0
3.0
3.6
coss
Common-Source Output Capacitance
1.0
1.2
1.0
1.2
crss
Common-Source
Reverse Transfer Capacitance
0.2
0.3
0.2
0.3
Gps
Common-Source Power Gain
13
14
17
20
mS
ID = 20 mA, VDS = 15 V
f = 1 KHz, VSB = 0
ID = 20 mA
pF
VGS = 0
8.0
10
8.0
10
dB
NF
Noise Figure
4.5
Pi
Intercept Point
29
6.0
4.0
29
5.0
dBm
∆f = 2 MHz
VDS = 15 V
f = 1 MHz
VSB = 0
VDS = 15 V
f = 1 GHz
ID = 20 mA
VSB = 0