TSM2831 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =120mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =180mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities High density cell design for ultra low on-resistance 2.5V operating voltage Block Diagram Ordering Information Part No. TSM2831CY Packing Tape & Reel Package SOT-89 1kpcs per reel Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20V V Gate-Source Voltage VGS ±8 V ID - 2.8 A IDM - 10 A PD 1.5 W Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation o Ta = 25 C Ta = 75 oC Operating Junction Temperature 1.0 +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Unit TL 5 S Rθja 65 TJ Operating Junction and Storage Temperature Range Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. TSM2831 1-1 2003/12 rev. A o C/W Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = - 250uA BVDSS - 20 -- -- V Drain-Source On-State Resistance VGS = - 4.5V, ID = -2.8A RDS(ON) -- 95 120 mΩ Drain-Source On-State Resistance VGS = - 2.5V, ID = -1.5A RDS(ON) -- 122 180 Gate Threshold Voltage VDS = VGS, ID = - 250uA VGS(TH) - 0.45 -- -- V Zero Gate Voltage Drain Current VDS = - 16V, VGS = 0V IDSS -- -- - 1.0 uA Gate Body Leakage VGS = ± 8V, VDS = 0V IGSS -- -- ± 100 nA On-State Drain Current VDS ≧- 10V, VGS = -5V ID(ON) -6 -- -- A Forward Transconductance VDS = - 5V, ID = - 2.8A gfs -- 6.5 -- S Total Gate Charge VDS = - 6V, ID = - 2.8A, Qg -- 5.4 10 Gate-Source Charge VGS = - 4.5V Qgs -- 0.8 -- Qgd -- 1.1 -- td(on) -- 5 25 tr -- 19 60 td(off) -- 95 110 tf -- 65 80 Dynamic Gate-Drain Charge Turn-On Delay Time VDD = - 6V, RL = 6Ω, Turn-On Rise Time ID = - 1A, VGEN = - 4.5V, Turn-Off Delay Time RG = 6Ω Turn-Off Fall Time nC nS Input Capacitance VDS = - 6V, VGS = 0V, Ciss -- 447 -- Output Capacitance f = 1.0MHz Coss -- 127 -- Crss -- 80 -- IS -- -- - 1.6 A VSD -- - 0.8 - 1.2 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = - 1.6A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM2831 2-2 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM2831 3-3 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM2831 4-4 2003/12 rev. A SOT-89 Mechanical Drawing A I B G E D J F TSM2831 G H 0.89 4.05 1.20 4.25 0.035 0.159 0.047 0.167 I J 1.4 0.35 1.6 0.44 0.055 0.014 0.068 0.017 DIM C H A B C D E F SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 5-5 2003/12 rev. A