TSC TSM2320CX

TSM2320
20V N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Source
3. Drain
VDS = 20V
RDS (on), Vgs @ 4.5V, Ids @ 3.0A = 45mΩ
RDS (on), Vgs @ 2.5V, Ids @ 2.0A = 65mΩ
Features
—
Advanced trench process technology
—
Excellent thermal and electrical capabilities
—
High density cell design for ultra low on-resistance
—
Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM2320CX
Tape & Reel
SOT-23
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20V
V
Gate-Source Voltage
VGS
±10
V
ID
3.6
A
IDM
14
A
Continuous Drain Current
Pulsed Drain Current
o
Maximum Power Dissipation
Ta = 25 C
Ta = 75 oC
Operating Junction Temperature
PD
W
0.8
+150
o
C
TJ, TSTG
-55 to +150
o
C
Symbol
Limit
Unit
TL
5
S
Rθja
100
TJ
Operating Junction and Storage Temperature Range
1.25
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
TSM2320
1-5
2005/06 rev. A
o
C/W
Electrical Characteristics
Ta = 25 oC, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
V
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250uA
BVDSS
20
--
--
Drain-Source On-State Resistance
VGS = 4.5V, ID = 3A
RDS(ON)
--
32
45
Drain-Source On-State Resistance
VGS = 2.5V, ID = 2A
RDS(ON)
--
50
65
Gate Threshold Voltage
VDS = VGS, ID = -250uA
VGS(TH)
0.6
0.9
1.5
V
Zero Gate Voltage Drain Current
VDS = 16V, VGS = 0V
IDSS
--
--
1.0
uA
Gate Body Leakage
VGS = ±10V, VDS = 0V
IGSS
--
--
±100
nA
On-State Drain Current
VDS = 5V, VGS = 4.5V
ID(ON)
10
--
--
A
Forward Transconductance
VDS = 5V, ID = 3A
gfs
--
8
--
S
Qg
--
9.1
--
Qgs
--
1.4
--
Qgd
--
3.2
--
td(on)
--
19.6
tr
--
4
td(off)
--
26
tf
--
15.7
Ciss
--
641
--
Coss
--
135
--
Crss
--
101
--
IS
--
--
1.6
A
VSD
--
0.81
1.2
V
mΩ
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V, ID =3.5A,
VGS = 4.5V
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
VDS = 15V, VGS = 0V,
f = 1.0MHz
nC
nS
pF
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS = 1.6A, VGS = 0V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM2320
2-5
2005/06 rev. A
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
TSM2320
3-5
2005/06 rev. A
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
TSM2320
4-5
2005/06 rev. A
SOT-23 Mechanical Drawing
A
B
F
A
B
C
D
E
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.88
2.91
0.113
0.115
0.39
0.42
0.015
0.017
1.78
2.03
0.070
0.080
0.51
0.61
0.020
0.024
1.59
1.66
0.063
0.065
F
G
1.04
0.07
DIM
E
G
D
TSM2320
1.08
0.09
0.041
0.003
C
5-5
2005/06 rev. A
0.043
0.004