2N5783 PNP 2N5786 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5783 and 2N5786 types are Complementary Silicon Power Transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCER VCEO VEBO IC IB PD PD TJ, Tstg ΘJC ΘJA UNITS V V V V A A W W °C °C/W °C/W 45 45 40 3.5 3.5 1.0 10 1.0 -65 to +200 17.5 175 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=45V, VBE=1.5V ICEV VCE=45V, VBE=1.5V, TC=150°C ICER VCE=40V, RBE=100Ω ICER VCE=40V, RBE=100Ω, TC=150°C ICEO VCE=25V IEBO VEB=3.5V BVCER IC=10mA, RBE=100Ω 45 BVCEO IC=10mA 40 VCE(SAT) IC=1.6A, IB=160mA VCE(SAT) IC=3.2A, IB=800mA VBE(ON) VCE=2.0V, IC=1.6A hFE VCE=2.0V, IC=1.6A 20 hFE VCE=2.0V, IC=3.2A 4.0 fT VCE=2.0V, IC=100mA, f=4.0MHz (2N5783) 8.0 fT VCE=2.0V, IC=100mA, f=200kHz (2N5786) 1.0 hfe VCE=2.0V, IC=100mA, f=1.0kHz 25 ton VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5783) ton VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5786) toff VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5783) toff VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5786) MAX 10 1.0 10 1.0 100 10 1.0 2.0 1.5 150 UNITS μA mA μA mA μA μA V V V V V 60 4.0 MHz MHz 0.5 5.0 2.5 15 μs μs μs μs R1 (21-September 2011) 2N5783 PNP 2N5786 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (21-September 2011) w w w. c e n t r a l s e m i . c o m