CENTRAL BUY49S

BUY49S
HIGH VOLTAGE
NPN SILICON TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR BUY49S is a
NPN Silicon Transistor designed for high voltage,
high current applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
250
UNITS
V
200
V
VEBO
IC
6.0
V
3.0
A
ICM
PD
5.0
A
1.0
W
TJ, Tstg
ΘJC
-65 to +200
°C
Thermal Resistance
15
°C/W
Thermal Resistance
ΘJA
175
°C/W
MAX
0.1
UNITS
µA
50
µA
Collector-Emitter Voltage
SYMBOL
VCBO
VCEO
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=200V
ICBO
VCB=200V, TC=150°C
BVCBO
IC=100µA
250
BVCEO
IC=20mA
200
BVEBO
IE=1.0mA
6.0
VCE(SAT)
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VBE(SAT)
hFE
40
hFE
VCE=5.0V, IC=20mA
VCE=5.0V, IC=500mA
hFE
fT
VCE=2.0V, IC=20mA, TC=–55°C
VCE=10V, IC=100mA
16
Cob
VCB=10V, IE=0, f=1.0MHz
VCC=20V, IC=500mA, IB1=IB2=50mA
ton
toff
IS/B*
VCC=20V, IC=500mA, IB1=IB2=50mA
VCE=50V
V
V
V
0.2
V
1.1
V
40
50
0.2
MHz
30
pF
0.3
µs
1.0
µs
A
* Pulsed: 1.0s non repetitive pulse.
R0 (27-August 2010)
BUY49S
HIGH VOLTAGE
NPN SILICON TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R0 (27-August 2010)
w w w. c e n t r a l s e m i . c o m