BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV BU806 400 BU807 330 UNITS V 400 330 V VCEO VEBO 200 150 V 6.0 V IC 8.0 A ICM IB 15 A PD TJ, Tstg ΘJA ΘJC ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=400V (BU806) ICES VCE=330V (BU807) 2.0 A 60 W -65 to +150 °C 70 °C/W 2.08 °C/W TYP MAX 100 UNITS μA 100 μA 100 μA ICEV ICEV IEBO VCE=400V, VEB=6.0V (BU806) VCE=330V, VEB=6.0V (BU807) VEB=6.0V BVCEO BVCEO IC=100mA (BU806) IC=100mA (BU807) VCE(SAT) VBE(SAT) IC=5.0A, IB=50mA IC=5.0A, IB=50mA 1.5 V 2.4 V VF ton IF=4.0A VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA 2.0 V 0.35 toff VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA 0.4 1.0 μs 100 μA 3.5 mA 200 V 150 V μs R0 (4-August 2011) BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R0 (4-August 2011) w w w. c e n t r a l s e m i . c o m