CM4209 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CM4209 is a PNP Saturated Switching Silicon Transistor designed for high speed switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO UNITS V 15 V 4.5 V 200 mA PD PD 500 mW 1.2 W -65 to +200 °C Thermal Resistance TJ, Tstg ΘJA 350 °C/W Thermal Resistance ΘJC 146 °C/W MAX 10 UNITS nA 5.0 µA Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature VEBO IC 15 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=8.0V ICES VCE=8.0V, TA=125°C BVCBO IC=100µA 15 V BVCES IC=100µA 15 V BVCEO IC=3.0mA 15 V BVEBO IE=100µA 4.5 VCE(SAT) IC=1.0mA, IB=100µA IC=10mA, IB=1.0mA 0.15 V 0.18 V IC=50mA, IB=5.0mA IC=1.0mA, IB=100µA 0.60 V 0.80 V 0.86 V 1.5 V VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 0.69 VCE=0.5V, IC=1.0mA VCE=0.3V, IC=10mA 35 VCE=0.3V, IC=10mA, TA=-55°C VCE=1.0V, IC=50mA 20 50 V 120 40 R0 (10-June 2011) CM4209 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX fT VCE=10V, IC=10mA, f=100MHz 850 Cob VCB=5.0V, IE=0 7.0 UNITS MHz pF Cib ton VBE=0.5V, IC=0 VCC=1.5V, IC=10mA, IB1=1.0mA 7.0 20 pF ns toff VCC=1.5V, IC=10mA, IB1=IB2=1.0mA 20 ns TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (10-June 2011) w w w. c e n t r a l s e m i . c o m