Central CMLT2907A SURFACE MOUNT PICOminiTM DUAL PNP SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOmini™ devices has been designed for small signal general purpose and switching applications. MARKING CODE: L07 SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance UNITS VCBO VCEO VEBO IC PD 60 60 5.0 600 350 V V V mA mW TJ,Tstg ΘJA -65 to +150 357 °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE VCB=50V VCB=50V, TA=125°C VCE=30V, VBE=0.5V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA MIN MAX UNITS 10 10 50 nA µA nA V V V V V V V 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 50 300 R1 (13-November 2002) Central TM CMLT2907A SURFACE MOUNT PICOminiTM DUAL PNP SILICON TRANSISTORS Semiconductor Corp. ELECTRICAL CHARACTERISTICS: Continued SYMBOL TEST CONDITIONS MIN fT Cob Cib ton td tr toff ts tf VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA 200 MAX UNITS 8.0 30 45 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE D E A 6 E 5 4 B G 1 C F 3 2 H R0 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 MARKING CODE: L07 R1 (13-November 2002)