CMST2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for small signal, general purpose and switching applications. MARKING CODE: 2FC SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VCBO VCEO 60 60 V V VEBO IC 5.0 V 600 mA 275 mW PD TJ, Tstg -65 to +150 °C ΘJA 455 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS ICBO VCB=50V 10 nA ICBO 10 µA 50 nA BVCBO VCB=50V, TA=125°C VCE=30V, VEB=0.5V IC=10µA 60 V BVCEO IC=10mA 60 V BVEBO VCE(SAT) IE=10µA 5.0 ICEV MIN V IC=150mA, IB=15mA IC=500mA, IB=50mA 0.4 V 1.6 V 1.3 V VBE(SAT) IC=150mA, IB=15mA IC=500mA, IB=50mA 2.6 V hFE VCE=10V, IC=0.1mA 75 hFE VCE=10V, IC=1.0mA VCE=10V, IC=10mA 100 VCE=10V, IC=150mA VCE=10V, IC=500mA 100 hFE fT VCE=20V, IC=50mA, f=100MHz 200 VCE(SAT) VBE(SAT) hFE hFE 100 300 50 MHz R4 (9-February 2010) CMST2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS Cob VCB=10V, IE=0, f=1.0MHz VEB=2.0V, IC=0, f=1.0MHz Cib ton td tr toff ts tf VCC=30V, VBE=0.5, IC=150mA, VCC=30V, VBE=0.5, IC=150mA, VCC=30V, VBE=0.5, IC=150mA, MAX UNITS 8.0 pF 30 pF IB1=15mA 45 ns IB1=15mA 10 ns IB1=15mA 40 ns 100 ns 80 ns 30 ns VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA SOT-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 2FC R4 (9-February 2010) w w w. c e n t r a l s e m i . c o m