CMLT2207G SURFACE MOUNT SILICON DUAL, COMPLEMENTARY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal general purpose amplifier and switching applications. MARKING CODE: L7G SOT-563 CASE • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA NPN (Q1) 75 40 6.0 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN (Q1) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=60V 10 ICBO VCB=50V ICBO VCB=60V, TA=125°C 10 ICBO VCB=50V, TA=125°C ICEV VCE=60V, VEB(OFF)=3.0V 10 ICEV VCE=30V, VEB(OFF)=500mV IEBO VEB=3.0V 10 BVCBO IC=10μA 75 BVCEO IC=10mA 40 BVEBO IE=10μA 6.0 VCE(SAT) IC=150mA, IB=15mA 0.3 VCE(SAT) IC=500mA, IB=50mA 1.0 VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 VBE(SAT) IC=500mA, IB=50mA 2.0 hFE VCE=10V, IC=0.1mA 35 VCE=10V, IC=1.0mA 50 hFE hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=150mA 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 - PNP (Q2) 60 60 5.0 600 350 -65 to +150 357 PNP MIN 60 60 5.0 75 100 100 100 50 (Q2) MAX 10 10 50 0.4 1.6 1.3 2.6 300 - UNITS V V V mA mW °C °C/W UNITS nA nA nA nA nA nA nA V V V V V V V R5 (29-June 2015) CMLT2207G SURFACE MOUNT SILICON DUAL, COMPLEMENTARY TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS fT VCE=20V, IC=20mA, f=100MHz fT VCE=20V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz Cib VEB=2.0V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz hie VCE=10V, IC=10mA, f=1.0kHz hre VCE=10V, IC=1.0mA, f=1.0kHz hre VCE=10V, IC=10mA, f=1.0kHz hfe VCE=10V, IC=1.0mA, f=1.0kHz hfe VCE=10V, IC=10mA, f=1.0kHz hoe VCE=10V, IC=1.0mA, f=1.0kHz hoe VCE=10V, IC=10mA, f=1.0kHz rb’Cc VCB=10V, IE=20mA, f=31.8MHz NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA toff VCC=6.0V, IC=150mA, IB1=IB2=15mA ts VCC=30V, IC=150mA, IB1=IB2=15mA ts VCC=6.0V, IC=150mA, IB1=IB2=15mA tf VCC=30V, IC=150mA, IB1=IB2=15mA tf VCC=6.0V, IC=150mA, IB1=IB2=15mA NPN (Q1) MIN MAX 300 8.0 25 2.0 8.0 0.25 1.25 8.0 4.0 50 300 75 375 5.0 35 25 200 150 4.0 10 25 225 60 - PNP (Q2) MIN MAX 200 8.0 30 45 10 40 100 80 30 UNITS MHz MHz pF pF pF kΩ kΩ x10-4 x10-4 μS μS ps dB ns ns ns ns ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 w w w. c e n t r a l s e m i . c o m MARKING CODE: L7G R5 (29-June 2015)