CENTRAL CMXT3904_10

CMXT3904
SURFACE MOUNT
DUAL NPN
SILICON TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT3904
type is a dual NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose amplifier and switching
applications.
MARKING CODE: X1A
SOT-26 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
hie
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
UNITS
V
V
V
mA
mW
°C
°C/W
60
40
6.0
200
350
-65 to +150
357
CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
VCE=30V, VEB=3.0V
50
IC=10μA
60
IC=1.0mA
40
IE=10μA
6.0
IC=10mA, IB=1.0mA
0.20
IC=50mA, IB=5.0mA
0.30
IC=10mA, IB=1.0mA
0.65
0.85
IC=50mA, IB=5.0mA
0.95
VCE=1.0V, IC=0.1mA
40
VCE=1.0V, IC=1.0mA
70
VCE=1.0V, IC=10mA
100
300
VCE=1.0V, IC=50mA
60
VCE=1.0V, IC=100mA
30
VCE=20V, IC=10mA, f=100MHz
300
VCB=5.0V, IE=0, f=1.0MHz
4.0
VBE=0.5V, IC=0, f=1.0MHz
8.0
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
10
UNITS
nA
V
V
V
V
V
V
V
MHz
pF
pF
kΩ
R3 (12-February 2010)
CMXT3904
SURFACE MOUNT
DUAL NPN
SILICON TRANSISTORS
ELECTRICAL
SYMBOL
hre
hfe
hoe
NF
td
tr
ts
tf
CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
UNITS
VCE=10V, IC=1.0mA, f=1.0kHz
0.5
8.0
x10-4
VCE=10V, IC=1.0mA, f=1.0kHz
100
400
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
40
μS
VCE=5.0V, IC=100μA, RS=1.0kΩ,
f=10Hz to 15.7kHz
5.0
dB
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ns
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ns
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
200
ns
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
50
ns
SOT-26 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: X1A
R3 (12-February 2010)
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