CMLT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOmini™ devices has been designed for small signal general purpose and switching applications. MARKING CODE: L07 SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V mA mW °C °C/W 60 60 5.0 600 350 -65 to +150 357 CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VCB=50V 10 VCB=50V, TA=125°C 10 VCE=30V, VBE=0.5V 50 IC=10µA 60 IC=10mA 60 IE=10µA 5.0 IC=150mA, IB=15mA 0.4 IC=500mA, IB=50mA 1.6 IC=150mA, IB=15mA 1.3 IC=500mA, IB=50mA 2.6 75 VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA 100 VCE=10V, IC=10mA 100 VCE=10V, IC=150mA 100 300 VCE=10V, IC=500mA 50 UNITS nA µA nA V V V V V V V R2 (20-January 2010) CMLT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: SYMBOL fT Cob Cib ton td tr toff ts tf TEST CONDITIONS VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MIN 200 MAX 8.0 30 45 10 40 100 80 30 UNITS MHz pF pF ns ns ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: L07 R2 (20-January 2010) w w w. c e n t r a l s e m i . c o m