CMLT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DUAL PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal general purpose and switching applications. MARKING CODE: L07 SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 60 5.0 600 350 -65 to +150 357 CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VCB=50V 10 VCB=50V, TA=125°C 10 VCE=30V, VBE=0.5V 50 IC=10μA 60 IC=10mA 60 IE=10μA 5.0 IC=150mA, IB=15mA 0.4 IC=500mA, IB=50mA 1.6 IC=150mA, IB=15mA 1.3 IC=500mA, IB=50mA 2.6 VCE=10V, IC=0.1mA 75 VCE=10V, IC=1.0mA 100 VCE=10V, IC=10mA 100 VCE=10V, IC=150mA 100 300 VCE=10V, IC=500mA 50 UNITS V V V mA mW °C °C/W UNITS nA μA nA V V V V V V V R4 (29-June 2015) CMLT2907A SURFACE MOUNT SILICON DUAL PNP TRANSISTOR ELECTRICAL SYMBOL fT Cob Cib ton td tr toff ts tf CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX UNITS VCE=20V, IC=50mA, f=100MHz 200 MHz VCB=10V, IE=0, f=1.0MHz 8.0 pF VBE=2.0V, IC=0, f=1.0MHz 30 pF VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 45 ns VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 ns VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 40 ns VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ns VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 ns SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: L07 R4 (29-June 2015) w w w. c e n t r a l s e m i . c o m