CMUT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: FC2 SOT-523 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VCBO VCEO 60 V 60 V VEBO IC 5.0 V 600 mA 250 mW PD TJ, Tstg ΘJA -65 to +150°C 500 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS ICBO VCB=50V 10 nA ICBO 10 µA ICEV VCB=50V, TA=125°C VCE=30V, VBE=0.5V 50 nA BVCBO IC=10µA 60 BVCEO IC=10mA 60 V BVEBO IE=10µA 5.0 V VCE(SAT) VCE(SAT) IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE IC=500mA, IB=50mA VCE=10V, IC=0.1mA MIN V 0.4 V 1.6 V 1.3 V 2.6 V 75 VCE=10V, IC=1.0mA VCE=10V, IC=10mA 100 VCE=10V, IC=150mA VCE=10V, IC=500mA 100 100 300 50 R3 (9-February 2010) CMUT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL fT Cob Cib VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz ton VCC=30V, VBE=0.5V, IC=150mA, VCC=30V, VBE=0.5V, IC=150mA, VCC=30V, VBE=0.5V, IC=150mA, td tr toff MAX 200 UNITS MHz 8.0 pF 30 pF IB1=15mA 45 ns IB1=15mA 10 ns IB1=15mA 40 ns IB1=IB2=15mA 100 ns ts VCC=6.0V, IC=150mA, VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns tf VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 ns SOT-523 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: FC2 R3 (9-February 2010) w w w. c e n t r a l s e m i . c o m