CXT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL 60 V 60 V VEBO IC 5.0 V 600 mA PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO ICBO UNITS VCBO VCEO 1.2 W -65 to +150 °C 104 °C/W MAX UNITS 10 nA ICEV VCB=50V VCB=50V, VCE=30V, BVCBO IC=10µA 60 V BVCEO IC=10mA IE=10µA 60 V 5.0 BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE TA=125°C 10 µA VBE=0.5V 50 nA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, VCE=10V, IC=0.1mA IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA V 0.4 V 1.6 V 1.3 V 2.6 V 75 100 100 100 300 R7 (23-February 2010) CXT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX SYMBOL hFE fT Cob Cib ton td tr toff VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz UNITS 50 200 VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz MHz 8.0 pF 30 pF IB1=15mA 45 ns IB1=15mA 10 ns IB1=15mA 40 ns IB1=IB2=15mA 100 ns VCC=30V, VBE=0.5, IC=150mA, VCC=30V, VBE=0.5, IC=150mA, VCC=30V, VBE=0.5, IC=150mA, ts VCC=6.0V, IC=150mA, VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns tf VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 ns SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R7 (23-February 2010) w w w. c e n t r a l s e m i . c o m