PROCESS CP794R Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 95,400 PRINCIPAL DEVICE TYPES CEDM8004 CMLM0584 CMLDM7484 R0 (29-July 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP794R Typical Electrical Characteristics R0 (29-July 2010) w w w. c e n t r a l s e m i . c o m