CMLM0584 Multi Discrete Module ™ w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0584 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a Low VF Schottky diode packaged in a space saving PICOmini™ SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODE: 58C SOT-563 CASE • Device is Halogen Free by design FEATURES: • DC / DC Converters • Battery Powered Portable Equipment • ESD protection up to 2kV • Low rDS(on) Transistor (1.5Ω MAX @ VGS=2.5V) • Low VF Schottky Diode (0.47V MAX @ 0.5A) MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance SYMBOL PD PD PD TJ, Tstg ΘJA 350 300 150 -65 to +150 357 UNITS mW mW mW °C °C/W MAXIMUM RATINGS - Q1: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current SYMBOL VDS VGS ID 30 8.0 450 UNITS V V mA MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp≤1.0ms Peak Forward Surge Current, tp = 8.0ms SYMBOL VRRM IF IFRM IFSM 40 500 3.5 10 UNITS V mA A A APPLICATIONS: ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS=0, ID=100μA 30 VGS(th) VDS=VGS, ID=250μA 0.5 VSD VGS=0, IS=100mA 0.5 VGS=4.5V, ID=430mA rDS(ON) rDS(ON) VGS=2.5V, ID=200mA rDS(ON) VGS=1.8V, ID=100mA gFS VDS =10V, ID=100mA 200 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 MAX 3.0 1.0 1.0 1.1 1.1 2.0 3.3 UNITS μA μA V V V Ω Ω Ω mS R1 (28-July 2010) CMLM0584 Multi Discrete Module ™ SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE ELECTRICAL SYMBOL Crss Ciss Coss CHARACTERISTICS - Q1 - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MAX VDS=25V, VGS=0, f=1.0MHz 10 VDS=25V, VGS=0, f=1.0MHz 55 VDS=25V, VGS=0, f=1.0MHz 15 UNITS pF pF pF ELECTRICAL SYMBOL IR IR BVR VF VF VF VF VF CT CHARACTERISTICS - D1: (TA=25°C) TEST CONDITIONS VR=10V VR=30V IR=500μA IF=100μA IF=1.0mA IF=10mA IF=100mA IF=500mA VR=1.0V, f=1.0MHz UNITS μA μA V V V V V V pF MIN MAX 20 100 40 0.13 0.21 0.27 0.35 0.47 50 SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Drain Q1 MARKING CODE: 58C R1 (28-July 2010) w w w. c e n t r a l s e m i . c o m