CENTRAL CPD48V_10

PROCESS
CPD48V
Schottky Diode
High Current Schottky Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
13.8 x 13.8 MILS
Die Thickness
7.1 MILS
Anode Bonding Pad Area
9.0 x 9.0 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
89,720
PRINCIPAL DEVICE TYPES
CMPSH-3 Series
CMSSH-3 Series
CMXSH-3
CMKSH-3T
BACKSIDE CATHODE
R3 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CPD48V
Typical Electrical Characteristics
R3 (22-March 2010)
w w w. c e n t r a l s e m i . c o m