CENTRAL CPD83V_10

PROCESS
CPD83V
Switching Diode
High Speed Switching Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
11 x 11 MILS
Die Thickness
7.1 MILS
Anode Bonding Pad Area
3.35 x 3.35 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au-As - 13,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
137,880
BACKSIDE CATHODE
R0
PRINCIPAL DEVICE TYPES
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
CMPD2838
CMPD7000
R5 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CPD83V
Typical Electrical Characteristics
R5 (22-March 2010)
w w w. c e n t r a l s e m i . c o m