CENTRAL CPD80V_10

PROCESS
CPD80V
Switching Diode
High Voltage Switching Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
16 x 16 MILS
Die Thickness
7.1 MILS
Anode Bonding Pad Area
6.5 x 6.5 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au-As - 13,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
64,704
PRINCIPAL DEVICE TYPES
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
BACKSIDE CATHODE
R3 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CPD80V
Typical Electrical Characteristics
R3 (22-March 2010)
w w w. c e n t r a l s e m i . c o m