PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 64,704 PRINCIPAL DEVICE TYPES CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 BACKSIDE CATHODE R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD80V Typical Electrical Characteristics R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m