PROCESS CPD06 General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 89 x 89 MILS Die Thickness 10.2 MILS Anode Bonding Pad Area 66 x 66 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5400 thru 1N5408 1N5550 thru 1N5554 1N5624 thru 1N5627 CMR3-02 Series BACKSIDE CATHODE R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD06 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m