CTLM1074-M832D MULTI DISCRETE MODULE ™ SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER TM Top View Bottom View TLM832D CASE MARKING CODE: CFD APPLICATIONS • Switching Circuits • DC / DC Converters • LCD Backlighting • Battery powered / Portable Equipment applications including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc. Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CTLM1074-M832D consists of a Low VCE (SAT) PNP Transistor and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. Due to its leadless package design this device is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. FEATURES • Dual Chip Device • High Current (1.0A) Transistor and Schottky Rectifier • Low VCE(SAT) PNP Transistor (450mV @ IC = 1.0A Max) • Low VF Schottky Rectifier (550mV @ 1.0A Max) • High Power to Footprint Ratio of 275mW per sq mm (Package Power Dissipation / Package Surface Area) • Small TLM 3x2mm Leadless Surface Mount Package • Complementary Device CTLM1034-M832D MAXIMUM RATINGS (TLM832D Package): (TA=25°C) SYMBOL Power Dissipation* PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA 1.65 -65 to +150 76 UNITS W °C °C/W MAXIMUM RATINGS Q1: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC 40 25 6.0 1.0 V V V A MAXIMUM RATINGS D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp<1ms Forward Surge Current, tp = 8ms VRRM IF IFRM IFSM 40 1.0 3.5 10 V A A A MAX 100 100 UNITS nA nA V V V mV mV ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100μA 40 BVCEO IC=10mA 25 BVEBO IE=100μA 6.0 VCE(SAT) IC=50mA, IB=5.0mA 25 VCE(SAT) IC=100mA, IB=10mA 40 50 75 *FR-4 Epoxy PCB with copper mounting pad area of 54mm2 R1 (22-July 2008) CTLM1074-M832D Central TM MULTI DISCRETE MODULE ™ SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (Continued): SYMBOL TEST CONDITIONS VCE(SAT) IC=200mA, IB=20mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=800mA, IB=80mA VCE(SAT) IC=1.0A, IB=100mA VBE(SAT) IC=800mA, IB=80mA VBE(ON) VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=100mA hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=1.0A fT VCE=10V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz ELECTRICAL CHARACTERISTICS D1: (TA=25°C) SYMBOL TEST CONDITIONS IR VR= 5V IR VR= 8V IR VR= 15V BVR IR= 100μA VF IF= 10mA VF IF= 100mA VF IF= 500mA VF IF= 1.0A CJ VR= 4.0V, f=1.0MHz MIN TYP 80 150 220 275 100 100 100 50 100 MAX 150 250 400 450 1.1 0.9 300 15 MIN UNITS mV mV mV mV V V TYP MAX 10 20 50 40 0.29 0.36 0.45 0.55 50 MHz pF UNITS μA μA μA V V V V V pF TLM832D - MECHANICAL OUTLINE LEAD CODE: 1) BASE Q1 2) EMITTER Q1 3) ANODE D1 4) ANODE D1 5) CATHODE D1 6) CATHODE D1 7) COLLECTOR Q1 8) COLLECTOR Q1 Suggested mounting pad layout for maximum power dissipation (Dimensions in mm) For standard mounting refer to TLM832D Package Details MARKING CODE: CFD R1 (22-July 2008)