CXT491E SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT491E type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO UNITS 80 V 60 V VEBO IC 5.0 V 1.0 A IB 200 mA ICM 2.0 A PD TJ, Tstg 1.2 W -65 to +150 °C ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=60V 100 nA IEBO BVCBO BVCEO VEB=4.0V IC=100µA 100 nA 80 V IC=10mA 60 V BVEBO IE=100µA 5.0 V VCE(SAT) VCE(SAT) IC=500mA, IB=50mA IC=1.0A, IB=100mA IC=1.0A, IB=100mA 0.20 V 0.40 V 1.1 V VCE=5.0V, IC=1.0A VCE=5.0V, IC=1.0mA 1.0 V Emitter-Base Voltage Continuous Collector Current Continuous Base Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VBE(SAT) VBE(ON) hFE hFE 200 VCE=5.0V, IC=500mA VCE=5.0V, IC=1.0A 200 15 fT VCE=5.0V, IC=2.0A VCE=10V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz hFE hFE 600 50 150 MHz 10 pF R2 (19-February 2010) CXT491E SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R2 (19-February 2010) w w w. c e n t r a l s e m i . c o m