CENTRAL CYT5554D

CYT5554D
SURFACE MOUNT
DUAL, ISOLATED
COMPLEMENTARY
HIGH VOLTAGE
NPN/PNP SILICON TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT5554D type
consists of one (1) NPN high voltage silicon transistor
and one (1) complementary PNP high voltage silicon
transistor packaged in an epoxy molded SOT-228
surface mount case. Manufactured by the epitaxial
planar process, this SUPERmini™ device is ideal for
high voltage applications.
MARKING: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
NPN (Q1)
250
220
6.0
600
PNP (Q2)
250
220
7.0
600
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
ICBO
VCB=120V
50
50
ICBO
VCB=120V, TA=100°C
50
50
IEBO
VBE=3.0V
50
IEBO
VBE=4.0V
50
BVCBO
IC=100μA
250
250
BVCEO
IC=1.0mA
220
220
BVEBO
IE=10μA
6.0
7.0
VCE(SAT)
IC=10mA, IB=1.0mA
75
100
VCE(SAT)
IC=50mA, IB=5.0mA
100
150
VBE(SAT)
IC=10mA, IB=1.0mA
1.00
1.00
VBE(SAT)
IC=50mA, IB=5.0mA
1.00
1.00
VCE=5.0V, IC=1.0mA
120
100
hFE
hFE
VCE=5.0V, IC=10mA
120
300
100
300
hFE
VCE=5.0V, IC=50mA
75
75
hFE
VCE=10V, IC=150mA
25
25
-
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
μA
nA
nA
V
V
V
mV
mV
V
V
R2 (13-August 2010)
CYT5554D
SURFACE MOUNT
DUAL, ISOLATED
COMPLEMENTARY
HIGH VOLTAGE
NPN/PNP SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C
NPN (Q1)
SYMBOL
TEST CONDITIONS
MIN MAX
fT
VCE=10V, IC=10mA, f=100MHz
100
300
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
20
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
200
NF
VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
8.0
unless otherwise noted)
PNP (Q2)
MIN MAX
UNITS
100
300
MHz
6.0
pF
pF
40
200
-
8.0
dB
SOT-228 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Collector Q1
2) Collector Q1
3) Collector Q2
4) Collector Q2
5)
6)
7)
8)
Emitter Q2
Base Q2
Emitter Q1
Base Q1
MARKING: FULL PART NUMBER
R2 (13-August 2010)
w w w. c e n t r a l s e m i . c o m