CZT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401E is a PNP Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER FEATURES: SOT-223 CASE APPLICATIONS: • General purpose switching and amplification • Telephone applications MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage ♦ ♦ Collector-Emitter Voltage ♦ Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance • High Collector Breakdown Voltage 250V • Low Leakage Current 50nA MAX • Low Saturation Voltage 150mV MAX @ 50mA • Complementary Device: CZT5551E • SOT-223 Surface Mount Package SYMBOL UNITS VCBO VCEO 250 V 220 V VEBO IC 7.0 V 600 mA PD TJ, Tstg ΘJA 2.0 W -65 to +150 °C 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS ICBO VCB=120V 50 nA ICBO VCB=120V, TA=100°C VEB=3.0V 50 μA 50 nA IEBO ♦ BVCBO ♦ BVCEO ♦ BVEBO ♦ VCE(SAT) ♦ VCE(SAT) MIN IC=100µA 250 V IC=1.0mA 220 V IE=10µA 7.0 V VBE(SAT) IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA 100 mV 150 1.00 mV V VBE(SAT) IC=50mA, IB=5.0mA 1.00 V ♦ Enhanced specification R1 (1-March 2010) CZT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX SYMBOL ♦ hFE ♦ hFE ♦ hFE ♦ hFE fT Cob hfe NF UNITS VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA 100 VCE=5.0V, IC=50mA 75 VCE=10V, IC=150mA VCE=10V, IC=10mA, f=100MHz 100 300 MHz 6.0 pF 40 200 VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200μA, RS=10Ω, 100 300 25 f=10Hz to 15.7kHz 8.0 dB ♦ Enhanced specification SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R1 (1-March 2010) w w w. c e n t r a l s e m i . c o m