CXT953 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT953 type is a high current, high voltage silicon PNP transistor. Packaged in the SOT-89 surface mount case, the CXT953 is ideal for industrial and consumer applications requiring high energy efficiency in a small package. MARKING: FULL PART NUMBER SOT-89 CASE FEATURES: APPLICATIONS: • Power Management • DC/DC Converters • Motor Driving • Switching MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance • Low Saturation Voltage: VCE(SAT)=0.42V MAX @ IC=4.0A • NPN Complement: CXT853 SYMBOL UNITS VCBO VCEO 140 V 100 V VEBO IC 6.0 V 5.0 A PD TJ, Tstg 1.2 W -65 to +150 °C ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO ICBO ICER IEBO BVCBO BVCER VCB=100V VCB=100V, TA=100°C VCE=100V, RBE≤1.0kΩ VEB=6.0V IC=100μA MAX UNITS 50 nA 1.0 μA 50 nA 10 nA 140 170 V IC=10mA, RBE≤1.0kΩ IC=10mA 140 150 V BVCEO 100 120 V BVEBO IE=100μA 6.0 9.0 VCE(SAT) IC=100mA, IB=10mA IC=1.0A, IB=100mA 90 120 mV IC=2.0A, IB=200mA 170 220 mV IC=4.0A, IB=400mA IC=4.0A, IB=400mA 320 420 mV 1.0 1.2 V VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) 20 V 50 mV R1 (23-February 2010) CXT953 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP SYMBOL hFE hFE hFE hFE hFE VCE=1.0V, IC=10mA VCE=1.0V, IC=1.0A 100 100 200 VCE=1.0V, IC=3.0A VCE=1.0V, IC=4.0A 50 70 30 45 MAX UNITS 300 fT VCE=1.0V, IC=10A VCE=10V, IC=100mA, f=50MHz 150 15 MHz Cob VCB=10V, IE=0, f=1.0MHz 45 pF SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (23-February 2010) w w w. c e n t r a l s e m i . c o m