CENTRAL CXT953_10

CXT953
SURFACE MOUNT
HIGH CURRENT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT953 type is
a high current, high voltage silicon PNP transistor.
Packaged in the SOT-89 surface mount case,
the CXT953 is ideal for industrial and consumer
applications requiring high energy efficiency in a small
package.
MARKING: FULL PART NUMBER
SOT-89 CASE
FEATURES:
APPLICATIONS:
• Power Management
• DC/DC Converters
• Motor Driving
• Switching
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
• Low Saturation Voltage:
VCE(SAT)=0.42V MAX @ IC=4.0A
• NPN Complement: CXT853
SYMBOL
UNITS
VCBO
VCEO
140
V
100
V
VEBO
IC
6.0
V
5.0
A
PD
TJ, Tstg
1.2
W
-65 to +150
°C
ΘJA
104
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
ICBO
ICER
IEBO
BVCBO
BVCER
VCB=100V
VCB=100V, TA=100°C
VCE=100V, RBE≤1.0kΩ
VEB=6.0V
IC=100μA
MAX
UNITS
50
nA
1.0
μA
50
nA
10
nA
140
170
V
IC=10mA, RBE≤1.0kΩ
IC=10mA
140
150
V
BVCEO
100
120
V
BVEBO
IE=100μA
6.0
9.0
VCE(SAT)
IC=100mA, IB=10mA
IC=1.0A, IB=100mA
90
120
mV
IC=2.0A, IB=200mA
170
220
mV
IC=4.0A, IB=400mA
IC=4.0A, IB=400mA
320
420
mV
1.0
1.2
V
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
20
V
50
mV
R1 (23-February 2010)
CXT953
SURFACE MOUNT
HIGH CURRENT
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
SYMBOL
hFE
hFE
hFE
hFE
hFE
VCE=1.0V, IC=10mA
VCE=1.0V, IC=1.0A
100
100
200
VCE=1.0V, IC=3.0A
VCE=1.0V, IC=4.0A
50
70
30
45
MAX
UNITS
300
fT
VCE=1.0V, IC=10A
VCE=10V, IC=100mA, f=50MHz
150
15
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
45
pF
SOT-89 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
R1 (23-February 2010)
w w w. c e n t r a l s e m i . c o m