QSD2030F Plastic Silicon Photodiode Features ■ PIN photodiode ■ Package material and color: black epoxy ■ Package type: T-1 3/4 (5mm lens diameter) ■ High sensitivity ■ Wide reception angle, 40° ■ Peak sensitivity λ = 880nm ■ Daylight filter ■ Radiant sensitive area: 1mm x 1mm Package Dimensions 0.195 (4.95) REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN Schematic CATHODE 0.050 (1.25) CATHODE ANODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QSD2030F Rev. 1.1.0 www.fairchildsemi.com QSD2030F — Plastic Silicon Photodiode January 2008 Symbol Parameter TOPR Operating Temperature TSTG Storage Temperature TSOL-I TSOL-F Rating Unit -40 to +100 °C -40 to +100 °C Soldering Temperature (Iron)(2,3,4) 240 for 5 sec °C Soldering Temperature (Flow)(2,3) 260 for 10 sec °C VBR Reverse Breakdown Voltage 50 V PD Dissipation(1) 100 mW Power Notes: 1. Derate power dissipation linearly 1.33mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) minimum from housing. Electrical/Optical Characteristics (TA =25°C) Symbol Parameter λPS Peak Sensitivity Wavelength λSR Wavelength Sensitivity Range Test Conditions Typ. Max. 880 700 Θ Reception Angle VF Forward Voltage IF = 80mA ID Reverse Dark Current VR = 10V, Ee = 0 IL Reverse Light Current Ee = 0.5mW/cm2, VR = 5V, λ = 950nm C Capacitance tr Rise Time tf Fall Time ©2005 Fairchild Semiconductor Corporation QSD2030F Rev. 1.1.0 Min. nm 1100 nm ±20 ° 1.3 V 10 15 Units nA 25 µA VR = 0, f = 1MHz, Ee = 0 60 pF VR = 5V, RL = 50Ω, λ = 950nm 5 ns 5 www.fairchildsemi.com 2 QSD2030F — Plastic Silicon Photodiode Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. QSD2030F — Plastic Silicon Photodiode Typical Performance Characteristics IL–Reverse Light Current Voltage (µA) Figure 1. Reverse Light Current vs. Emitter Output Power Figure 2. Angular Response 0° 55 10° 20° 30° VR = 5V TA = 25°C 50 45 40 40° 35 1.0 30 0.9 25 50° 0.8 60° 20 0.7 15 70° 10 80° 5 90° 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ee–Emitter output power (mw/cm2) Figure 3. Capacitance vs. Reverse Voltage Figure 4. Dark Current vs. Reverse Voltage 14 1.3 1.2 12 TA = 25°C ID–Dark Current (nA) Cj–Capacitance (pF) 1.1 10 8 6 4 1.0 0.9 0.8 0.7 0.6 0.5 2 0.4 0.3 0 0 2 4 6 8 10 12 14 16 18 0 20 Vr–Reverse Voltage (V) ©2005 Fairchild Semiconductor Corporation QSD2030F Rev. 1.1.0 5 10 15 20 25 30 35 VR–Break Down Voltage (V) www.fairchildsemi.com 3 ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * ™ PDP-SPM™ SyncFET™ ® Power220® ® Power247 The Power Franchise® POWEREDGE® Power-SPM™ PowerTrench® TinyBoost™ Programmable Active Droop™ TinyBuck™ ® QFET TinyLogic® QS™ TINYOPTO™ QT Optoelectronics™ TinyPower™ ® Quiet Series™ TinyPWM™ RapidConfigure™ TinyWire™ Fairchild® SMART START™ Fairchild Semiconductor® µSerDes™ ® SPM FACT Quiet Series™ UHC® STEALTH™ FACT® Ultra FRFET™ SuperFET™ FAST® UniFET™ SuperSOT™-3 FastvCore™ VCX™ ® ®* SuperSOT™-6 FlashWriter SuperSOT™-8 * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I32 ©2005 Fairchild Semiconductor Corporation QSD2030F Rev. 1.1.0 www.fairchildsemi.com 4 QSD2030F — Plastic Silicon Photodiode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.