DMC3018LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NE W PRODUC T • • • • • • • • • Mechanical Data • • Complementary Pair MOSFET Low On-Resistance • N-Channel: 20mΩ @ 10V 32mΩ @ 4.5V • P-Channel: 45mΩ @ -10V 65mΩ @ -4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072g (approximate) • • • • • • SOP-8L S2 D2 S1 D1 G1 D1 G2 G1 S2 TOP VIEW N-Channel MOSFET Maximum Ratings N-CHANNEL Characteristic Symbol VDSS VGSS Pulsed Drain Current (Note 4) Value -30 ±20 -6 -5 -21 Unit V V Symbol Value Unit PD 2.5 W RθJA 50 °C/W TJ, TSTG -55 to +150 °C ID Symbol VDSS VGSS TA = 25°C TA = 70°C Drain Current (Note 1) Pulsed Drain Current (Note 4) Thermal Characteristics A A @TA = 25°C unless otherwise specified Characteristic ID IDM A A @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range 1. 2. 3. 4. Unit V V IDM Drain Source Voltage Gate-Source Voltage Notes: Value 30 ±20 9.1 7.7 32 TA = 25°C TA = 70°C Maximum Ratings P-CHANNEL S1 P-Channel MOSFET @TA = 25°C unless otherwise specified Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) D1 D2 G2 TOP VIEW D2 Device mounted on FR-4 PCB, on 2oz. Copper pads with RθJA = 50°C/W No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Repetitive rating, pulse width limited by junction temperature. DMC3018LSD Document number: DS31310 Rev. 7 - 2 1 of 6 www.diodes.com October 2008 © Diodes Incorporated DMC3018LSD Electrical Characteristics N-CHANNEL NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ± 100 V μA nA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.9 18 29 10 ⎯ 2.1 20 32 V ⎯ 1.2 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 6.9A VGS = 4.5V, ID = 5.0A VDS = 5V, ID = 6.9A VGS = 0V, IS = 1A pF pF pF Ω Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS |Yfs| VSD 1 ⎯ ⎯ ⎯ 0.5 Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 631 147 99 0.9 ⎯ ⎯ ⎯ ⎯ Total Gate Charge Qg ⎯ ⎯ Gate-Source Charge Gate-Drain Charge Qgs Qgd ⎯ ⎯ 5.9 12.4 1.8 3.4 Electrical Characteristics P-CHANNEL @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage nC ⎯ ⎯ VDS = 15V, VGS = 0V, f =1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 15V, VGS = 4.5V, ID = 7A VDS = 15V, VGS = 10V, ID = 9A VDS = 15V, VGS = 10V, ID = 9A VDS = 15V, VGS = 10V, ID = 9A Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ± 100 V μA nA VGS = 0V, ID = -250μA VDS = -24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.7 35 56 8.2 ⎯ -2.1 45 65 ⎯ -1.2 V VDS = VGS, ID = -250μA VGS = -10V, ID = -6A VGS = -4.5V, ID = -5.0A VDS =-5V, ID = -6A VGS = 0V, IS = -1A Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS |Yfs| VSD -1 ⎯ ⎯ ⎯ -0.5 Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 722 114 92 1.9 ⎯ ⎯ ⎯ ⎯ Total Gate Charge Qg ⎯ ⎯ Gate-Source Charge Gate-Drain Charge Qgs Qgd ⎯ ⎯ 7.0 13.7 1.7 4.1 Notes: mΩ Test Condition ⎯ ⎯ mΩ S V pF pF pF Ω nC Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = -15V, VGS = -4.5V, ID = -6A VDS = -15V, VGS = -10V, ID = -6A VDS = -15V, VGS = -4.5V, ID = -6A VDS = -15V, VGS = -4.5V, ID = -6A 5. Short duration pulse test used to minimize self-heating effect. DMC3018LSD Document number: DS31310 Rev. 7 - 2 2 of 6 www.diodes.com October 2008 © Diodes Incorporated DMC3018LSD N-CHANNEL 12 10 VGS = 10V 11 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 9 8 7 6 5 VGS = 3.0V 4 3 7 6 5 4 T A = 150°C 3 TA = 125°C 2 2 VGS = 1.5V VGS = 1.0V 1 T A = 85°C TA = 25°C 1 VGS = 2.5V 0 TA = -55°C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) 5 1 1.5 2 2.5 3 VGS, GATE SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 4.5V VGS = 10V 0.04 VGS = 4.5V ID = 5A 0.03 0.02 VGS = 10V ID = 6.9A 0.01 0.01 0.1 0 -50 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig 3 On-Resistance vs. Drain Current & Gate Voltage -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Static Drain-Source On-Resistance vs. Ambient Temperature 1,000 3 2.8 Ciss ID = 250µA CT, TOTAL CAPACITANCE (pF) 2.6 3.5 0.05 0.1 VTH, GATE THRESHOLD VOLTAGE (V) NEW PRODUCT VDS = 5V Pulsed 9 10 2.4 2.2 2 1.8 1.6 1.4 Coss 100 Crss f = 1MHz 1.2 1 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature DMC3018LSD Document number: DS31310 Rev. 7 - 2 3 of 6 www.diodes.com 10 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance October 2008 © Diodes Incorporated DMC3018LSD N-CHANNEL (continued) 10 IS, SOURCE CURRENT (A) 0.1 0.01 TA = 150°C T A = 125°C T A = 85°C 0.001 0.0001 TA = 25°C T A = -55°C 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage P-CHANNEL 10 12 11 9 VGS = -10V 9 VGS = -4.5V 8 7 6 5 4 VGS = -3.0V 3 VGS = -1.5V VGS = -1.0V 2 1 VDS = 5V Pulsed 8 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 10 7 6 5 4 TA = 150°C TA = 125°C 3 TA = 85°C 2 VGS = -2.5V TA = 25°C TA = -55°C 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Output Characteristics 5 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = -4.5V VGS = -10V 0.01 0.1 1 10 -ID, DRAIN-SOURCE CURRENT (A) Fig 10 On-Resistance vs. Drain Current & Gate Voltage DMC3018LSD Document number: DS31310 Rev. 7 - 2 1.5 2 2.5 3 3.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 9 Typical Transfer Characteristics 4 0.05 0.1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 1 4 of 6 www.diodes.com 0.04 0.03 VGS = -4.5V ID = -5A 0.02 VGS = -10V ID = -6.9A 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 11 Static Drain-Source On-Resistance vs. Ambient Temperature October 2008 © Diodes Incorporated DMC3018LSD P-CHANNEL (continued) f = 1MHz ID = -250µA 2.6 C, CAPACITANCE (pF) -VTH, GATE THRESHOLD VOLTAGE (V) 10,000 2.4 2.2 2 1.8 1.6 1,000 Ciss Coss 100 Crss 1.4 1.2 10 1 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 12 Gate Threshold Variation vs. Ambient Temperature 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Total Capacitance 10 -IS, SOURCE CURRENT (A) NEW PRODUCT 3 2.8 1 0.1 TA = 150°C TA = 125°C 0.01 TA = 85°C TA = 25°C 0.001 T A = -55°C 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 14 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 6) Part Number DMC3018LSD-13 Notes: Case SOP-8L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 8 5 Logo C3018LD Part no. YY WW 1 4 Xth week: 01~52 Year : "07" =2007 "08" =2008 Top View DMC3018LSD Document number: DS31310 Rev. 7 - 2 5 of 6 www.diodes.com October 2008 © Diodes Incorporated DMC3018LSD 0.254 Package Outline Dimensions NEW PRODUCT E1 E A1 L GAUGE PLANE SEATING PLANE DETAIL A 7°~9° h 45° DETAIL A A2 A A3 b e D SOP-8L Dim Min Max A 1.75 A1 0.08 0.25 A2 1.30 1.50 A3 0.20 Typ. b 0.3 0.5 D 4.80 5.30 E 5.79 6.20 E1 3.70 4.10 e 1.27 Typ. h 0.35 L 0.38 1.27 0° 8° θ All Dimensions in mm Suggested Pad Layout X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMC3018LSD Document number: DS31310 Rev. 7 - 2 6 of 6 www.diodes.com October 2008 © Diodes Incorporated