DMG4468LFG N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: DFN3030-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.0172 grams (approximate) • • • • • 8 7 6 5 5 6 7 8 S 2 S 1 D 1 TOP VIEW Maximum Ratings 2 3 G 4 4 BOTTOM VIEW Pin Configuration TOP VIEW Internal Schematic BOTTOM VIEW S 3 @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Unit V V IDM Value 30 ±20 7.62 4.83 45.9 Symbol PD RθJA TJ, TSTG Value 0.99 126.7 -55 to +150 Unit W °C/W °C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG4468LFG Document number: DS31857 Rev. 2 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG4468LFG @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 - 2.0 V RDS (ON) - 10 17 15 23.5 mΩ |Yfs| VSD - 8 0.7 1.0 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 11.6A VGS = 4.5V, ID = 10A VDS = 10V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 867 85 81 1.39 18.85 2.59 6.15 5.46 14.53 18.84 6.01 - pF pF pF Ω nC nC nC ns ns ns ns VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 11.6A VDD = 15V, VGS = 10V, RL = 1.3Ω, RG = 3Ω, ID = 1A 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 30 50 VGS = 10V 25 ID, DRAIN CURRENT (A) VGS = 4.5V 40 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 30 20 VGS = 3.0V VDS = 5V 20 15 10 TA = 150°C 10 5 TA = 125°C VGS = 2.5V VGS = 2.2V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG4468LFG Document number: DS31857 Rev. 2 - 2 T A = -55°C 0 5 2 of 6 www.diodes.com TA = 85°C T A = 25°C 0 1 2 3 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 October 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.020 0.016 VGS = 4.5V 0.012 VGS = 10V 0.008 0.004 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.3 VGS = 10V ID = 10A 1.1 0.9 0.7 0.5 -50 0.03 T A = 150°C TA = 125°C TA = 25°C 0 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.05 0.04 0.03 VGS = 4.5V ID = 5.0A 0.02 VGS = 10V ID = 10A 0.01 0 -50 20 16 IS, SOURCE CURRENT (A) ID = 1mA ID = 250µA TA = 25°C 12 0.8 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS31857 Rev. 2 - 2 5 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 2.0 DMG4468LFG TA = -55°C 0.01 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 1.2 TA = 85°C 0.02 -25 1.6 VGS = 4.5V 0.04 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 5.0A 1.5 0.05 30 1.7 VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG4468LFG 3 of 6 www.diodes.com 8 4 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 October 2009 © Diodes Incorporated DMG4468LFG IGSS, LEAKAGE CURRENT (nA) IDSS, LEAKAGE CURRENT (nA) 1,000 T A = 150°C 1,000 100 TA = 125°C 100 T A = 85°C 10 TA = 125°C 10 TA = 25°C 1 T A = 150°C T A = -55°C TA = 85°C TA = 25°C 1 1 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.10 Gate-Source Leakge Current vs Voltage 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Leakage Current vs. Drain-Source Voltage 1,000 IGSS, LEAKAGE CURRENT (nA) 100 TA = 150°C 10 T A = 125°C TA = -55°C TA = 25°C T A = 85°C 1 1 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.11 Gate-Source Leakge Current vs Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 10,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 83°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG4468LFG Document number: DS31857 Rev. 2 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 October 2009 © Diodes Incorporated DMG4468LFG Ordering Information (Note 7) Part Number DMG4468LFG-7 Packaging 3000 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DFN3030-8 YYWW NEW PRODUCT Notes: Case DFN3030-8 N45 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year, ex: 09 for 2009 WW = Week code 01 to 52 N45 Package Outline Dimensions A DFN3030-8 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 ⎯ ⎯ b 0.29 0.39 0.34 D 2.90 3.10 3.00 D2 2.19 2.39 2.29 e 0.65 ⎯ ⎯ E 2.90 3.10 3.00 E2 1.64 1.84 1.74 L 0.30 0.60 0.45 All Dimensions in mm A3 SEATING PLANE A1 e b .2 R0 E 00 E2 L D2 D Suggested Pad Layout Z X1 X2 Dimensions Value (in mm) Z 2.59 G 0.11 X1 2.49 X2 0.65 Y 0.39 C 0.65 G Y DMG4468LFG Document number: DS31857 Rev. 2 - 2 C 5 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG4468LFG NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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