DMG1023UV DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Up To 3KV "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD PROTECTED Maximum Ratings • • • • • • Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) D2 G1 S1 S2 G2 D1 BOTTOM VIEW TOP VIEW TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) VGS = -4.5V Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Unit V V IDM Value -20 ±6 -1.03 -0.68 -3 Symbol PD RθJA TJ, TSTG Value 530 235 -55 to +150 Unit mW °C/W °C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG1023UV Document number: DS31975 Rev. 5 - 2 1 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG1023UV Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -100 ±2.0 V nA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 RDS (ON) - |Yfs| VSD - -1.0 0.75 1.05 1.5 20 25 -1.2 V Static Drain-Source On-Resistance 0.5 0.7 1.0 0.9 -0.8 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VGS = -1.7V, ID = -100mA VGS = -1.5V, ID = -100mA VDS = -10V, ID = -250mA VGS = 0V, IS = -150mA Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 59.76 12.07 6.36 622.4 100.3 132.2 5.1 8.1 28.4 20.7 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω S V pF pF pF pC pC pC ns ns ns ns Test Condition VDS = -16V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -250mA VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω, ID = -200mA 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 1.5 10 VGS = -8.0V VDS = -5V 8 VGS = -4.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 1.2 VGS = -3.0V 0.9 VGS = -2.5V VGS = -2.0V 0.6 0.3 6 4 2 T A = 150°C VGS = -1.5V T A = 125°C VGS = -1.2V 0 TA = -55°C 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG1023UV Document number: DS31975 Rev. 5 - 2 5 2 of 6 www.diodes.com TA = 85°C T A = 25°C 0 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 June 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMG1023UV RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 1.4 1.2 1.0 VGS = -1.8V 0.8 VGS = -2.5V 0.6 VGS = -4.5V 0.4 0.2 0 0.3 0.6 0.9 1.2 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -4.5V 0.8 TA = 150°C T A = 85°C TA = 25°C 0.4 TA = -55°C 0.2 0 0 1.5 1.7 1.2 1.5 1.0 VGS = -2.5V ID = -500mA 1.3 VGS = -4.5V ID = -1.0A 1.1 0.9 0.3 0.6 0.9 1.2 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5 VGS = -2.5V ID = -500mA 0.8 0.6 VGS = -4.5V ID = -1.0A 0.4 0.2 0.7 0.5 -50 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -IS, SOURCE CURRENT (A) 10 1.2 ID = -1mA 0.8 ID = -250µA 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG1023UV Document number: DS31975 Rev. 5 - 2 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.6 -VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 125°C 0.6 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 1.0 3 of 6 www.diodes.com 8 6 T A = 25°C 4 2 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 June 2010 © Diodes Incorporated DMG1023UV 100 1,000 f = 1MHz 10 -IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) Ciss Coss Crss TA = 150°C 100 TA = 125°C 10 T A = 85°C TA = 25°C 1 1 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA R θJA = 260°C/W D = 0.02 P(pk) 0.01 D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 Ordering Information 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 100 1,000 (Note 7) Part Number DMG1023UV-7 Notes: 10 Case SOT-563 Packaging 3000 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PA1 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DMG1023UV Document number: DS31975 Rev. 5 - 2 YM 2010 X Mar 3 Apr 4 PA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 4 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D June 2010 © Diodes Incorporated DMG1023UV Package Outline Dimensions A B C D G M K SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm H L Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 C1 G Y X DMG1023UV Document number: DS31975 Rev. 5 - 2 5 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG1023UV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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