DMG1012UW N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Up To 2KV "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish ۛ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 2 Ordering Information: See Page 2 Weight: 0.006 grams (approximate) • • • • • • • Drain D Gate ESD PROTECTED TO 2kV Gate Protection Diode TOP VIEW G Source TOP VIEW EQUIVALENT CIRCUIT Maximum Ratings S @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Unit V V IDM Value 20 ±6 1.0 0.64 6 Symbol PD RθJA TJ, TSTG Max 0.29 425 -55 to +150 Unit W °C/W °C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG1012UW Document number: DS31859 Rev. 3 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1012UW @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 100 ±1.0 V nA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 RDS (ON) - |Yfs| VSD - 1.0 0.45 0.6 0.75 1.2 V Static Drain-Source On-Resistance 0.3 0.4 0.5 1.4 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 60.67 9.68 5.37 736.6 93.6 116.6 5.1 7.4 26.7 12.3 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω S V pF pF pF pC pC pC ns ns ns ns Test Condition VDS = 16V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 1.5 1.5 VGS = 8.0V VGS = 4.5V 1.2 1.2 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 2.5V VGS = 2.0V 0.9 0.6 VGS = 1.5V 0.3 VDS = 5V 0.9 0.6 TA = 150°C TA = 125°C 0.3 T A = 85°C TA = 25°C TA = -55°C VGS = 1.2V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMG1012UW Document number: DS31859 Rev. 3 - 2 0 5 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com October 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.8 0.7 0.6 0.5 VGS = 1.8V 0.4 VGS = 2.5V 0.3 VGS = 4.5V 0.2 0.1 0 0 0.3 0.6 0.9 1.2 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5V ID = 500mA VGS = 4.5V ID = 1.0A 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature TA = 150°C 0.4 TA = 125°C TA = 85°C 0.3 T A = 25°C 0.2 T A = -55°C 0.1 0 0.3 0.6 0.9 1.2 1.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.6 IS, SOURCE CURRENT (A) 10 1.2 0.8 VGS = 4.5V 0.5 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 1.3 0.6 1.5 1.7 VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG1012UW ID = 250µA 0.4 8 6 T A = 25°C 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG1012UW Document number: DS31859 Rev. 3 - 2 3 of 6 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 October 2009 © Diodes Incorporated DMG1012UW IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 100 NEW PRODUCT C, CAPACITANCE (pF) Ciss 10 C oss Crss 1 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 1,000 TA = 150°C 100 TA = 125°C 10 T A = 85°C TA = 25°C 1 0 20 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 486°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response Ordering Information (Note 7) Part Number DMG1012UW-7 Notes: Case SOT-323 Packaging 3000 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMG1012UW Document number: DS31859 Rev. 3 - 2 Mar 3 NA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) YM NA1 2011 Y Apr 4 May 5 2012 Z Jun 6 4 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D October 2009 © Diodes Incorporated DMG1012UW Package Outline Dimensions NEW PRODUCT A SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K M J L D Suggested Pad Layout Y Z C X DMG1012UW Document number: DS31859 Rev. 3 - 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 5 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1012UW IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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