DMG3415UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Up To 3kV "Green" Device, Halogen and Antimony Free (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: DFN2015H4-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) S D G ESD PROTECTED TO 3kV Maximum Ratings TOP VIEW BOTTOM VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State Units V V IDM Value -16 ±8 -2.5 -2.2 -12 Symbol PD RθJA TJ, TSTG Value 0.49 250.7 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 4) A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s. 4. Repetitive rating, pulse width limited by junction temperature. DMG3415UFY4 Document number: DS31842 Rev. 4 - 2 1 of 6 www.diodes.com December 2009 © Diodes Incorporated DMG3415UFY4 Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS -16 ⎯ ⎯ ⎯ IGSS ⎯ ⎯ ⎯ -1.0 ±10 ±500 V μA μA nA VGS = 0V, ID = -250μA VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±5V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -0.3 RDS (ON) ⎯ mΩ |Yfs| ⎯ -1.0 39 52 65 ⎯ V Static Drain-Source On-Resistance -0.55 31 40 51 7.9 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -3.5A VGS = -1.8V, ID = -2.0A VDS = -5V, ID = -2.5A Ciss Coss Crss Rg ⎯ ⎯ ⎯ ⎯ 281.9 152.0 37.9 250 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 1.5 2.4 79.0 175.2 884.5 568 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC nC nC ns ns ns ns TJ = 25°C Gate-Source Leakage Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistnace SWITCHING CHARACTERISTICS (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time S Test Condition VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -4A VDS = -10V, VGS = -4.5V, RD = 2.5Ω, RG = 3.0Ω 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 20 20 VGS = 4.5V VGS = 3.5V VGS = 3.0V VGS = 2.5V 16 16 VGS = 2.0V ID, DRAIN CURRENT (A) Notes: ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 12 8 VGS = 1.5V 12 8 T A = 150°C 4 4 VDS = 5V TA = 125°C TA = 85°C TA = 25°C 0 T A = -55°C 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG3415UFY4 Document number: DS31842 Rev. 4 - 2 5 2 of 6 www.diodes.com 0.5 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2.5 December 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.08 0.07 0.06 0.05 VGS = 2.5V 0.04 VGS = 4.5V 0.03 0.02 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V ID = 10A VGS = 2.5V ID = 5A 0.6 -50 VGS = 4.5V 0.06 TA = 150°C 0.05 TA = 125°C 0.04 TA = 85°C TA = 25°C 0.03 TA = -55°C 0.02 0.01 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.2 0.8 0.07 4 8 12 16 ID, DRAIN CURRENT (A) 20 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.4 1.0 0.08 20 1.6 0.08 0.07 0.06 VGS = 2.5V ID = 5A 0.05 0.04 0.03 VGS = 4.5V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature 20 1.2 18 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG3415UFY4 0.9 ID = 1mA 0.6 ID = 250µA 0.3 14 12 10 8 TA = 25°C 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG3415UFY4 Document number: DS31842 Rev. 4 - 2 3 of 6 www.diodes.com 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 December 2009 © Diodes Incorporated DMG3415UFY4 IDSS, LEAKAGE CURRENT (nA) 10,000 TA = 150°C TA = 125°C 1,000 T A = 85°C 100 10 TA = 25°C TA = -55°C 1 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 100,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 171°C/W D = 0.02 P(pk) 0.01 D = 0.01 t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response 10 100 1,000 Ordering Information (Note 7) Part Number DMG3415UFY4-7 Notes: Case DFN2015H4-3 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 34P = Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 34P YM Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMG3415UFY4 Document number: DS31842 Rev. 4 - 2 Mar 3 2011 Y Apr 4 May 5 2012 Z Jun 6 4 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D December 2009 © Diodes Incorporated DMG3415UFY4 Package Outline Dimensions A3 DFN2015H4-3 Dim Min Max Typ A 0.40 − − A1 0 0.05 0.02 A3 0.13 − − b 0.20 0.30 0.25 d 0.30 − − D 1.45 1.575 1.50 D2 1.00 1.20 1.10 e 0.50 − − E 1.95 2.075 2.00 E2 0.70 0.90 0.80 f 0.60 − − L 0.25 0.35 0.30 z − − 0.125 All Dimensions in mm A NEW PRODUCT SEATING PLANE A1 z D L d e E2 E D2 f b Suggested Pad Layout X Y2 X1 Y1 G X Dimensions C G X X1 Y Y1 Y2 Value (in mm) 1.00 0.15 0.31 1.30 0.50 1.00 0.65 Y C DMG3415UFY4 Document number: DS31842 Rev. 4 - 2 5 of 6 www.diodes.com December 2009 © Diodes Incorporated DMG3415UFY4 NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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